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Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation
Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation
Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation
Kim, Seung Hyun (author) / Seok, Tae Jun (author) / Jin, Hyun Soo (author) / Kim, Woo-Byoung (author) / Park, Tae Joo (author)
Applied surface science ; 365 ; 376-379
2016-01-01
4 pages
Article (Journal)
English
DDC:
620.44
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