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    Corrigendum to "Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures" [Materials Science in Semiconductor Processing 91 (2019) 356–361]

    New search for: Ťapajna, M.
    New search for: Drobný, J.
    New search for: Gucmann, F.
    New search for: Hušeková, K.
    New search for: Gregušová, D.
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    New search for: Kuzmík, J.

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    Corrigendum to "Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures" [Materials Science in Semiconductor Processing 91 (2019) 356–361]

    New search for: Ťapajna, M.
    New search for: Drobný, J.
    New search for: Gucmann, F.
    New search for: Hušeková, K.
    New search for: Gregušová, D.
    New search for: Hashizume, T.
    New search for: Kuzmík, J.

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    Corrigendum to "Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures" [Materials Science in Semiconductor Processing 91 (2019) 356–361]

    New search for: Ťapajna, M.
    New search for: Drobný, J.
    New search for: Gucmann, F.
    New search for: Hušeková, K.
    New search for: Gregušová, D.
    New search for: Hashizume, T.
    New search for: Kuzmík, J.

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    Title:

    Corrigendum to "Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures" [Materials Science in Semiconductor Processing 91 (2019) 356–361]

    Contributors:

    Ťapajna, M. (author) / Drobný, J. (author) / Gucmann, F. (author) / Hušeková, K. (author) / Gregušová, D. (author) / Hashizume, T. (author) / Kuzmík, J. (author)

    Published in:

    Materials science in semiconductor processing ; 93 ; 381

    Publication date:

    2019-01-01

    Size:

    381 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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