A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
AMORPHOUS METAL OXIDE SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICE
Methods for producing the amorphous metal oxide semiconductor layer where amorphous metal oxide semiconductor layer is formed by use of a precursor composition containing a metal salt, a primary amide, and a water-based solution. The methodology for producing the amorphous metal oxide semiconductor layer includes applying the precursor composition onto a substrate to form a precursor film, and firing the film at a temperature of 150° C. or higher and lower than 300° C.
AMORPHOUS METAL OXIDE SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICE
Methods for producing the amorphous metal oxide semiconductor layer where amorphous metal oxide semiconductor layer is formed by use of a precursor composition containing a metal salt, a primary amide, and a water-based solution. The methodology for producing the amorphous metal oxide semiconductor layer includes applying the precursor composition onto a substrate to form a precursor film, and firing the film at a temperature of 150° C. or higher and lower than 300° C.
AMORPHOUS METAL OXIDE SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICE
HIROI YOSHIOMI (author) / MAEDA SHINICHI (author)
2022-10-13
Patent
Electronic Resource
English
AMORPHOUS METAL OXIDE SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICE
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