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Comparative study of boron doped gate oxide impact on 4H and 6H-SiC n-MOSFETs
Comparative study of boron doped gate oxide impact on 4H and 6H-SiC n-MOSFETs
Comparative study of boron doped gate oxide impact on 4H and 6H-SiC n-MOSFETs
Cabello, Maria (author) / Soler, Victor (author) / Knoll, Lars (author) / Montserrat, Josep (author) / Rebollo, Jose (author) / Mihaila, Andrei (author) / Godignon, Philippe (author)
Materials science in semiconductor processing ; 93 ; 357-359
2019-01-01
3 pages
Article (Journal)
English
DDC:
621.38152
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