A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
HANDLE SUBSTRATE FOR COMPOSITE SUBSTRATE FOR SEMICONDUCTOR
A handle substrate (1) formed from a light-transmitting ceramic. In the handle substrate (1), a surface region (2A) on the bonding surface (1a) side has voids having a size of 0.5-3.0 [mu]m in an average number density of 50 per mm2 or less. Inside the handle substrate (1) has been formed a region (3) that has voids having a size of 0.5-3.0 [mu]m in an average number density of 100 per mm2 or greater. The light-transmitting ceramic has an average particle diameter of 5-60 [mu]m.
HANDLE SUBSTRATE FOR COMPOSITE SUBSTRATE FOR SEMICONDUCTOR
A handle substrate (1) formed from a light-transmitting ceramic. In the handle substrate (1), a surface region (2A) on the bonding surface (1a) side has voids having a size of 0.5-3.0 [mu]m in an average number density of 50 per mm2 or less. Inside the handle substrate (1) has been formed a region (3) that has voids having a size of 0.5-3.0 [mu]m in an average number density of 100 per mm2 or greater. The light-transmitting ceramic has an average particle diameter of 5-60 [mu]m.
HANDLE SUBSTRATE FOR COMPOSITE SUBSTRATE FOR SEMICONDUCTOR
IWASAKI YASUNORI (author) / IDE AKIYOSHI (author) / MIYAZAWA SUGIO (author)
2015-07-22
Patent
Electronic Resource
English
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