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HANDLE SUBSTRATE FOR COMPOSITE SUBSTRATE FOR SEMICONDUCTOR
A handle substrate 1 is made of a translucent ceramics. An average density of pores having a size of 0.5 to 3.0 µ m included in a surface region 2A on the side of a bonding face 1a of the handle substrate 1 is 50 counts/mm 2 or smaller. It is formed a region 3, whose average density of pores having a size of 0.5 to 3.0 µ m is 100 counts/mm 2 or larger, in the handle substrate 1. The translucent ceramics has an average grain size of 5 to 60 µ m.
HANDLE SUBSTRATE FOR COMPOSITE SUBSTRATE FOR SEMICONDUCTOR
A handle substrate 1 is made of a translucent ceramics. An average density of pores having a size of 0.5 to 3.0 µ m included in a surface region 2A on the side of a bonding face 1a of the handle substrate 1 is 50 counts/mm 2 or smaller. It is formed a region 3, whose average density of pores having a size of 0.5 to 3.0 µ m is 100 counts/mm 2 or larger, in the handle substrate 1. The translucent ceramics has an average grain size of 5 to 60 µ m.
HANDLE SUBSTRATE FOR COMPOSITE SUBSTRATE FOR SEMICONDUCTOR
HANDHABUNG EINES SUBSTRATS FÜR EIN VERBUNDSUBSTRAT FÜR EINEN HALBLEITER
SUBSTRAT DE MANIPULATION POUR SUBSTRAT COMPOSITE POUR SEMI-CONDUCTEUR
IWASAKI YASUNORI (author) / IDE AKIYOSHI (author) / MIYAZAWA SUGIO (author)
2017-05-24
Patent
Electronic Resource
English
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