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Amorphous composite oxide film, crystalline composite oxide film, process for producing amorphous composite oxide film, process for producing crystalline composite oxide film, and composite oxide sint
Provided is an amorphous film comprised substantially of indium, tin, magnesium and oxygen, and containing tin at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Mg) and magnesium at a ratio of 0.1 to 2.0% based on an atomicity ratio of Mg/(In+Sn+Mg) with remnant being indium and oxygen, and having a film resistivity of 0.4 m[Omega]cm or less as a result of crystallizing the film by annealing the film at a temperature of 260 DEG C. or lower. An amorphous ITO thin film for use as a display electrode and the like in flat panel displays is obtained by way of sputter deposition without heating the substrate and without the need of adding water during the deposition. This amorphous ITO film has the property of being crystallized by annealing at 260 DEG C. or lower, which is not such a high temperature, and having low resistivity after crystallization. Also provided are a method of producing the film and a sintered compact for producing the film.
Amorphous composite oxide film, crystalline composite oxide film, process for producing amorphous composite oxide film, process for producing crystalline composite oxide film, and composite oxide sint
Provided is an amorphous film comprised substantially of indium, tin, magnesium and oxygen, and containing tin at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Mg) and magnesium at a ratio of 0.1 to 2.0% based on an atomicity ratio of Mg/(In+Sn+Mg) with remnant being indium and oxygen, and having a film resistivity of 0.4 m[Omega]cm or less as a result of crystallizing the film by annealing the film at a temperature of 260 DEG C. or lower. An amorphous ITO thin film for use as a display electrode and the like in flat panel displays is obtained by way of sputter deposition without heating the substrate and without the need of adding water during the deposition. This amorphous ITO film has the property of being crystallized by annealing at 260 DEG C. or lower, which is not such a high temperature, and having low resistivity after crystallization. Also provided are a method of producing the film and a sintered compact for producing the film.
Amorphous composite oxide film, crystalline composite oxide film, process for producing amorphous composite oxide film, process for producing crystalline composite oxide film, and composite oxide sint
IKISAWA MASAKATSU (author) / YAHAGI MASATAKA (author) / OSADA KOZO (author) / KAKENO TAKASHI (author)
2015-11-18
Patent
Electronic Resource
English
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