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Porous silicon carbide ceramic and preparation method thereof
The invention discloses porous silicon carbide ceramic and a preparation method thereof, and belongs to the technical field of silicon carbide ceramic material preparation. The preparation method comprises the steps of 1) taking SiC powder, a mixed resin solution and boron carbide as raw materials, fully ball-milling and uniformly mixing to prepare raw powder, and performing granulation, mold pressing and cold isostatic pressing to prepare a green body; (2) heating the green body to the temperature of 700-900 DEG C under the vacuum condition at the heating speed less than 100 DEG C/h, conducting heat preservation for 2-4 h, conducting furnace cooling, enabling mixed resin in the green body to be fully carbonized, and reserving pores; and 3) heating to the temperature of 2000-2200 DEG C at a heating speed of 200-300 DEG C/h in a normal-pressure protective atmosphere, cooling along with the furnace, transferring into an air furnace, and calcining at the temperature of 400-500 DEG C to remove redundant carbon, thereby obtaining the porous silicon carbide ceramic. In the preparation process, generation of a liquid phase is avoided, the grain boundary is pure, the porous silicon carbide ceramic has good normal-temperature mechanical properties and excellent high-temperature resistance and thermal shock resistance, and the performance stability of the porous ceramic material under the high-temperature condition is greatly improved.
本发明公开了一种多孔碳化硅陶瓷及其制备方法，属于碳化硅陶瓷材料制备技术领域。其制备过程如下：1)以SiC粉、混合树脂溶液、碳化硼为原料，充分球磨混合均匀后制成生粉，经造粒、模压、冷等静压后制成生坯；2)将生坯在真空条件下以小于100℃/h的升温速度升至700～900℃，保温2～4h并随炉冷却，使其中的混合树脂充分碳化留下孔隙；3)在常压保护气氛下以200～300℃/h的升温速度升至2000～2200℃，随炉冷却后移至空气炉中在400～500℃下煅烧除去多余的碳，即得到该多孔碳化硅陶瓷。本发明制备过程中避免了液相的生成，晶界纯净，其不仅具有良好的常温力学性能，耐高温性能、抗热震性能也比较优异，大大提升高温条件下多孔陶瓷材料性能的稳定性。
Porous silicon carbide ceramic and preparation method thereof
The invention discloses porous silicon carbide ceramic and a preparation method thereof, and belongs to the technical field of silicon carbide ceramic material preparation. The preparation method comprises the steps of 1) taking SiC powder, a mixed resin solution and boron carbide as raw materials, fully ball-milling and uniformly mixing to prepare raw powder, and performing granulation, mold pressing and cold isostatic pressing to prepare a green body; (2) heating the green body to the temperature of 700-900 DEG C under the vacuum condition at the heating speed less than 100 DEG C/h, conducting heat preservation for 2-4 h, conducting furnace cooling, enabling mixed resin in the green body to be fully carbonized, and reserving pores; and 3) heating to the temperature of 2000-2200 DEG C at a heating speed of 200-300 DEG C/h in a normal-pressure protective atmosphere, cooling along with the furnace, transferring into an air furnace, and calcining at the temperature of 400-500 DEG C to remove redundant carbon, thereby obtaining the porous silicon carbide ceramic. In the preparation process, generation of a liquid phase is avoided, the grain boundary is pure, the porous silicon carbide ceramic has good normal-temperature mechanical properties and excellent high-temperature resistance and thermal shock resistance, and the performance stability of the porous ceramic material under the high-temperature condition is greatly improved.
本发明公开了一种多孔碳化硅陶瓷及其制备方法，属于碳化硅陶瓷材料制备技术领域。其制备过程如下：1)以SiC粉、混合树脂溶液、碳化硼为原料，充分球磨混合均匀后制成生粉，经造粒、模压、冷等静压后制成生坯；2)将生坯在真空条件下以小于100℃/h的升温速度升至700～900℃，保温2～4h并随炉冷却，使其中的混合树脂充分碳化留下孔隙；3)在常压保护气氛下以200～300℃/h的升温速度升至2000～2200℃，随炉冷却后移至空气炉中在400～500℃下煅烧除去多余的碳，即得到该多孔碳化硅陶瓷。本发明制备过程中避免了液相的生成，晶界纯净，其不仅具有良好的常温力学性能，耐高温性能、抗热震性能也比较优异，大大提升高温条件下多孔陶瓷材料性能的稳定性。
Porous silicon carbide ceramic and preparation method thereof
一种多孔碳化硅陶瓷及其制备方法
WANG HONGJIE (author) / WANG YIQIANG (author) / SU LEI (author) / PENG KANG (author)
2021-06-11
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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