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Silicon carbide porous ceramic and preparation method thereof
The preparation method comprises the following steps: uniformly mixing silicon carbide powder, aluminum oxide powder and phosphoric acid to obtain a raw material A, uniformly mixing the raw material A and a polyvinyl alcohol binder to obtain ceramic slurry, and carrying out heat preservation on the ceramic slurry at 75-85 DEG C for 30-150 seconds to obtain a ceramic precursor; the temperature of the ceramic precursor is raised to T1 DEG C in a microwave oven, heat preservation is conducted for 25-30 min at the T1 DEG C, then the temperature is raised to T2 DEG C, heat preservation is conducted for 30-50 min at the T2 DEG C, the silicon carbide porous ceramic is obtained, T1 is equal to 500-600, and T2 is equal to 1200-1350. Aluminum oxide can react with phosphoric acid at high temperature to form inorganic aluminum phosphate which is resistant to high temperature, high in strength, small in thermal expansion coefficient and good in chemical stability, the inorganic aluminum phosphate can be used as an adhesive and can also be used as a sintering aid to reinforce a silicon carbide ceramic matrix, and the silicon carbide porous ceramic prepared according to the formula is high in porosity, pure in grain boundary and free of other impurity phases.
本发明公开了一种碳化硅多孔陶瓷及其制备方法，制备方法包括以下步骤：将碳化硅粉末、氧化铝粉末和磷酸混合均匀，得到原料A，将原料A和聚乙烯醇粘结剂混合均匀，得到陶瓷浆料，将所述陶瓷浆料于75～85℃保温30～150秒，得到陶瓷前驱体；将所述陶瓷前驱体于微波炉中升温至T1℃并于T1℃保温25～30min，再升温至T2℃并于T2℃保温30～50min，得到碳化硅多孔陶瓷，其中，T1＝500～600，T2＝1200～1350。氧化铝能与磷酸在高温下反应形成具有耐高温、高强度、热膨胀系数小、化学稳定性良好的无机磷酸铝，既能用作粘合剂，又能承当烧结助剂来增强碳化硅陶瓷基体，通过此配方制备的碳化硅多孔陶瓷，孔隙率高晶界纯净，无其他杂质相。
Silicon carbide porous ceramic and preparation method thereof
The preparation method comprises the following steps: uniformly mixing silicon carbide powder, aluminum oxide powder and phosphoric acid to obtain a raw material A, uniformly mixing the raw material A and a polyvinyl alcohol binder to obtain ceramic slurry, and carrying out heat preservation on the ceramic slurry at 75-85 DEG C for 30-150 seconds to obtain a ceramic precursor; the temperature of the ceramic precursor is raised to T1 DEG C in a microwave oven, heat preservation is conducted for 25-30 min at the T1 DEG C, then the temperature is raised to T2 DEG C, heat preservation is conducted for 30-50 min at the T2 DEG C, the silicon carbide porous ceramic is obtained, T1 is equal to 500-600, and T2 is equal to 1200-1350. Aluminum oxide can react with phosphoric acid at high temperature to form inorganic aluminum phosphate which is resistant to high temperature, high in strength, small in thermal expansion coefficient and good in chemical stability, the inorganic aluminum phosphate can be used as an adhesive and can also be used as a sintering aid to reinforce a silicon carbide ceramic matrix, and the silicon carbide porous ceramic prepared according to the formula is high in porosity, pure in grain boundary and free of other impurity phases.
本发明公开了一种碳化硅多孔陶瓷及其制备方法，制备方法包括以下步骤：将碳化硅粉末、氧化铝粉末和磷酸混合均匀，得到原料A，将原料A和聚乙烯醇粘结剂混合均匀，得到陶瓷浆料，将所述陶瓷浆料于75～85℃保温30～150秒，得到陶瓷前驱体；将所述陶瓷前驱体于微波炉中升温至T1℃并于T1℃保温25～30min，再升温至T2℃并于T2℃保温30～50min，得到碳化硅多孔陶瓷，其中，T1＝500～600，T2＝1200～1350。氧化铝能与磷酸在高温下反应形成具有耐高温、高强度、热膨胀系数小、化学稳定性良好的无机磷酸铝，既能用作粘合剂，又能承当烧结助剂来增强碳化硅陶瓷基体，通过此配方制备的碳化硅多孔陶瓷，孔隙率高晶界纯净，无其他杂质相。
Silicon carbide porous ceramic and preparation method thereof
碳化硅多孔陶瓷及其制备方法
MAO ZHIYONG (author) / XING XIANGYUAN (author) / CHEN JINGJING (author) / DONG CHENLONG (author) / WANG DAJIAN (author) / ZHAO YANG (author) / LI ANDONG (author) / WANG CHAO (author) / WANG XIN (author) / LI JIAMING (author)
2024-06-28
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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