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ITWO target material and preparation method thereof
The invention discloses an ITWO target material, which relates to the field of target material preparation. The ITWO target material comprises a metal oxide composition. The metal oxide composition comprises the following components: indium oxide, tin oxide and tungsten oxide; and tungsten oxide accounts for 1-5% of the total mass of indium oxide and tin oxide. The preparation process of the ITWO target material comprises the steps that the oxidized metal composition is pressed to be formed and then sintered. The tungsten oxide is doped into the ITO slurry, so that the performance of the film is better, and the density of the target material is improved through stage sintering.
本发明公开了一种ITWO靶材,涉及靶材制备领域。本发明所述ITWO靶材包括氧化金属组合物,所述氧化金属组合物包括以下组分:氧化铟、氧化锡和氧化钨;氧化钨占氧化铟和氧化锡总质量的1‑5%;所述ITWO靶材的制备过程包括:将所述氧化金属组合物压坯成型后烧结。本发明将氧化钨掺杂到ITO浆料中,使薄膜的性能更佳,经过阶段烧结提高了靶材密度。
ITWO target material and preparation method thereof
The invention discloses an ITWO target material, which relates to the field of target material preparation. The ITWO target material comprises a metal oxide composition. The metal oxide composition comprises the following components: indium oxide, tin oxide and tungsten oxide; and tungsten oxide accounts for 1-5% of the total mass of indium oxide and tin oxide. The preparation process of the ITWO target material comprises the steps that the oxidized metal composition is pressed to be formed and then sintered. The tungsten oxide is doped into the ITO slurry, so that the performance of the film is better, and the density of the target material is improved through stage sintering.
本发明公开了一种ITWO靶材,涉及靶材制备领域。本发明所述ITWO靶材包括氧化金属组合物,所述氧化金属组合物包括以下组分:氧化铟、氧化锡和氧化钨;氧化钨占氧化铟和氧化锡总质量的1‑5%;所述ITWO靶材的制备过程包括:将所述氧化金属组合物压坯成型后烧结。本发明将氧化钨掺杂到ITO浆料中,使薄膜的性能更佳,经过阶段烧结提高了靶材密度。
ITWO target material and preparation method thereof
一种ITWO靶材及其制备方法
LIU WENJIE (author) / ZHONG XIAOHUA (author) / TONG PEIYUN (author) / ZHU LIU (author)
2021-07-23
Patent
Electronic Resource
Chinese