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InGaN (indium gallium tin oxide) sputtering target material and preparation method thereof
The invention provides a preparation method of a low-resistivity indium gallium tin oxide (IGTO) sputtering target material, and belongs to the technical field of photoelectric device materials. The preparation method comprises the following steps: adding indium oxide powder, gallium oxide powder and tin oxide powder into a ball milling tank according to a certain indium-gallium-tin atomic ratio (70: 15: 15, 70: 10: 20 and 70: 20: 10), adding deionized water, a dispersing agent and a binder, and preparing IGTO slurry with high solid content and low viscosity by adopting a high-energy ball milling technology; preparing a high-density IGTO target material biscuit with a uniform microstructure by adopting a pressure slip casting technology or a granulation-mold pressing-cold isostatic pressing technology; and a high-density low-resistivity IGTO target material sintered body with fine grains is prepared by adopting a pressureless degreasing and sintering integrated technology. Experimental results of the embodiment show that the relative density of the indium gallium tin oxide sputtering target material prepared by the preparation method provided by the invention is 98.2-99.8%.
本发明提供了一种低电阻率铟镓锡氧化物(IGTO)溅射靶材的制备方法，属于光电器件材料技术领域。本发明是将氧化铟粉末、氧化镓粉末和氧化锡粉末按一定的铟镓锡原子比(70:15:15，70:10:20，70:20:10)加入到球磨罐中，并加入去离子水、分散剂和粘结剂，采用高能球磨技术制得高固含量低粘度的IGTO浆料；采用压力注浆成形技术或者造粒‑模压‑冷等静压成型技术制得高密度微观组织均匀的IGTO靶材素坯；采用无压脱脂烧结一体化技术制得高密度低电阻率晶粒细小的IGTO靶材烧结体。实施例得实验结果表明，本发明提供的制备方法制备的铟镓锡氧化物溅射靶材的相对密度为98.2～99.8％。
InGaN (indium gallium tin oxide) sputtering target material and preparation method thereof
The invention provides a preparation method of a low-resistivity indium gallium tin oxide (IGTO) sputtering target material, and belongs to the technical field of photoelectric device materials. The preparation method comprises the following steps: adding indium oxide powder, gallium oxide powder and tin oxide powder into a ball milling tank according to a certain indium-gallium-tin atomic ratio (70: 15: 15, 70: 10: 20 and 70: 20: 10), adding deionized water, a dispersing agent and a binder, and preparing IGTO slurry with high solid content and low viscosity by adopting a high-energy ball milling technology; preparing a high-density IGTO target material biscuit with a uniform microstructure by adopting a pressure slip casting technology or a granulation-mold pressing-cold isostatic pressing technology; and a high-density low-resistivity IGTO target material sintered body with fine grains is prepared by adopting a pressureless degreasing and sintering integrated technology. Experimental results of the embodiment show that the relative density of the indium gallium tin oxide sputtering target material prepared by the preparation method provided by the invention is 98.2-99.8%.
本发明提供了一种低电阻率铟镓锡氧化物(IGTO)溅射靶材的制备方法，属于光电器件材料技术领域。本发明是将氧化铟粉末、氧化镓粉末和氧化锡粉末按一定的铟镓锡原子比(70:15:15，70:10:20，70:20:10)加入到球磨罐中，并加入去离子水、分散剂和粘结剂，采用高能球磨技术制得高固含量低粘度的IGTO浆料；采用压力注浆成形技术或者造粒‑模压‑冷等静压成型技术制得高密度微观组织均匀的IGTO靶材素坯；采用无压脱脂烧结一体化技术制得高密度低电阻率晶粒细小的IGTO靶材烧结体。实施例得实验结果表明，本发明提供的制备方法制备的铟镓锡氧化物溅射靶材的相对密度为98.2～99.8％。
InGaN (indium gallium tin oxide) sputtering target material and preparation method thereof
一种铟镓锡氧化物溅射靶材及其制备方法
LIU YANG (author) / SUN BENSHUANG (author) / ZHAO YONGGE (author) / SHU YONGCHUN (author) / LIU MIAO (author) / WANG ZHIJUN (author)
2024-11-15
Patent
Electronic Resource
Chinese
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