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Tin niobium oxide target material and preparation method thereof
The invention belongs to the technical field of semiconductors, and discloses a preparation method of a tin niobium oxide target material, which comprises the following steps: preparing the tin niobium oxide target material by taking tin oxide and niobium oxide as raw materials; and the niobium oxide is at least one of Nb2O5, Nb2O4 and Nb2O3. According to the method, niobium oxide with various valence states is adopted as a raw material, so that most of final products are pentavalent niobium oxide and a small amount of trivalent and tetravalent niobium oxide, and the electric conductivity of the products can be improved. Meanwhile, the invention also provides the tin niobium oxide target material.
本发明属于半导体技术领域，公开了一种氧化锡铌靶材的制备方法，以氧化锡、氧化铌为原料制备氧化锡铌靶材；所述氧化铌为Nb2O5以及Nb2O4、Nb2O3中的至少一种。该方法采用了多种价态的氧化铌为原料，使最终产品中绝大部分为五价氧化铌以及少量的三价和四价氧化铌，可以提高产品的导电率。同时，本发明还提供了该氧化锡铌靶材。
Tin niobium oxide target material and preparation method thereof
The invention belongs to the technical field of semiconductors, and discloses a preparation method of a tin niobium oxide target material, which comprises the following steps: preparing the tin niobium oxide target material by taking tin oxide and niobium oxide as raw materials; and the niobium oxide is at least one of Nb2O5, Nb2O4 and Nb2O3. According to the method, niobium oxide with various valence states is adopted as a raw material, so that most of final products are pentavalent niobium oxide and a small amount of trivalent and tetravalent niobium oxide, and the electric conductivity of the products can be improved. Meanwhile, the invention also provides the tin niobium oxide target material.
本发明属于半导体技术领域，公开了一种氧化锡铌靶材的制备方法，以氧化锡、氧化铌为原料制备氧化锡铌靶材；所述氧化铌为Nb2O5以及Nb2O4、Nb2O3中的至少一种。该方法采用了多种价态的氧化铌为原料，使最终产品中绝大部分为五价氧化铌以及少量的三价和四价氧化铌，可以提高产品的导电率。同时，本发明还提供了该氧化锡铌靶材。
Tin niobium oxide target material and preparation method thereof
一种氧化锡铌靶材及其制备方法
LUO SISHI (author) / LI KAIJIE (author) / SHAO XUELIANG (author) / GU DESHENG (author) / ZHANG XINGYU (author)
2024-03-29
Patent
Electronic Resource
Chinese
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