A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS, PLUG, AND PLUG MANUFACTURING METHOD
The invention provides a member for a semiconductor manufacturing apparatus, a plug, and a plug manufacturing method. A gas flow path can be manufactured according to design, arc discharge in the gas flow path can be suppressed, and a sufficient gas flow rate can be ensured. A member (10) for a semiconductor manufacturing apparatus is provided with: a ceramic plate (20) having a wafer placement section (21) on the upper surface thereof; and a plug (50) that is provided in a plug installation hole (24) penetrating the ceramic plate (20) in the vertical direction and that allows the flow of gas. The plug (50) has a gas flow path (54) formed by combining a plurality of linear flow paths in a crossing manner in the interior of a plug main body (52). The gas flow path (54) has a plurality of openings in the upper surface and the lower surface of the plug body (52).
本发明提供半导体制造装置用部件、插塞以及插塞制造方法。能够按设计制作气体流路，且能够抑制气体流路内的电弧放电，并且，确保足够的气体流量。半导体制造装置用部件(10)具备：陶瓷板(20)，其上表面具有晶片载放部(21)；以及插塞(50)，其设置于沿上下方向贯穿陶瓷板(20)的插塞设置孔(24)，并容许气体的流通。插塞(50)在插塞主体(52)的内部具有多个线状流路按交叉的方式组合而构成的气体流路(54)。气体流路(54)在插塞主体(52)的上表面及下表面具有多个开口部。
MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS, PLUG, AND PLUG MANUFACTURING METHOD
The invention provides a member for a semiconductor manufacturing apparatus, a plug, and a plug manufacturing method. A gas flow path can be manufactured according to design, arc discharge in the gas flow path can be suppressed, and a sufficient gas flow rate can be ensured. A member (10) for a semiconductor manufacturing apparatus is provided with: a ceramic plate (20) having a wafer placement section (21) on the upper surface thereof; and a plug (50) that is provided in a plug installation hole (24) penetrating the ceramic plate (20) in the vertical direction and that allows the flow of gas. The plug (50) has a gas flow path (54) formed by combining a plurality of linear flow paths in a crossing manner in the interior of a plug main body (52). The gas flow path (54) has a plurality of openings in the upper surface and the lower surface of the plug body (52).
本发明提供半导体制造装置用部件、插塞以及插塞制造方法。能够按设计制作气体流路，且能够抑制气体流路内的电弧放电，并且，确保足够的气体流量。半导体制造装置用部件(10)具备：陶瓷板(20)，其上表面具有晶片载放部(21)；以及插塞(50)，其设置于沿上下方向贯穿陶瓷板(20)的插塞设置孔(24)，并容许气体的流通。插塞(50)在插塞主体(52)的内部具有多个线状流路按交叉的方式组合而构成的气体流路(54)。气体流路(54)在插塞主体(52)的上表面及下表面具有多个开口部。
MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS, PLUG, AND PLUG MANUFACTURING METHOD
半导体制造装置用部件、插塞以及插塞制造方法
HASHIMOTO HIDEAKI (author) / OHNO TADASHI (author) / ASHIDA CHUDAI (author)
2024-06-21
Patent
Electronic Resource
Chinese
IPC:
H01L
Halbleiterbauelemente
,
SEMICONDUCTOR DEVICES
/
B28B
Formgeben von Ton oder anderen keramischen Stoffzusammensetzungen, Schlacke oder von Mischungen, die zementartiges Material enthalten, z.B. Putzmörtel
,
SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS, SLAG OR MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
/
B33Y
ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
,
Additive (generative) Fertigung, d. h. die Herstellung von dreidimensionalen [3D] Bauteilen durch additive Abscheidung, additive Agglomeration oder additive Schichtung, z. B. durch 3D- Drucken, Stereolithografie oder selektives Lasersintern
/
C04B
Kalk
,
LIME
/
H01J
Elektrische Entladungsröhren oder Entladungslampen
,
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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