A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICE AND PLUG
To suppress a dielectric breakdown through a gas flow passage.SOLUTION: A member 10 for semiconductor manufacturing device comprises: a ceramic plate 20 which has a wafer mount surface 20a on its top surface; a plug 40 which has a main body part 45 provided on the side of an undersurface 20b of the ceramic plate 20 and having dense quality and a gas flow passage part 46 penetrating the main body part 45 in a thickness direction while bending; a gas discharge hole 28 which penetrates the ceramic plate 20 in a thickness direction and communicates with an upper side of the gas flow passage part 46; and a metal-made cooling plate 60 which is joined to the undersurface 20b of the ceramic plate 20, and has a gas supply passage 64 supplying a gas from below the flow passage part 46. The plug 40 is characterized in that the gas flow passage part 46 is porous 47 in at least a partial section of the overall length.SELECTED DRAWING: Figure 3
【課題】ガス流路を介した絶縁破壊を抑制する。【解決手段】半導体製造装置用部材１０は、上面にウエハ載置面２０ａを有するセラミックプレート２０と、セラミックプレート２０の下面２０ｂ側に設けられ、緻密質の本体部４５と、屈曲しながら本体部４５を厚み方向に貫通するガス流路部４６と、を有するプラグ４０と、セラミックプレート２０を厚み方向に貫通し、ガス流路部４６の上方に連通するガス放出孔２８と、セラミックプレート２０の下面２０ｂに接合され、ガス流路部４６の下方からガスを供給するガス供給通路６４を有する金属製の冷却プレート６０と、を備える。プラグ４０では、ガス流路部４６の全長のうちの少なくとも一部の区間が多孔質４７である。【選択図】図３
MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICE AND PLUG
To suppress a dielectric breakdown through a gas flow passage.SOLUTION: A member 10 for semiconductor manufacturing device comprises: a ceramic plate 20 which has a wafer mount surface 20a on its top surface; a plug 40 which has a main body part 45 provided on the side of an undersurface 20b of the ceramic plate 20 and having dense quality and a gas flow passage part 46 penetrating the main body part 45 in a thickness direction while bending; a gas discharge hole 28 which penetrates the ceramic plate 20 in a thickness direction and communicates with an upper side of the gas flow passage part 46; and a metal-made cooling plate 60 which is joined to the undersurface 20b of the ceramic plate 20, and has a gas supply passage 64 supplying a gas from below the flow passage part 46. The plug 40 is characterized in that the gas flow passage part 46 is porous 47 in at least a partial section of the overall length.SELECTED DRAWING: Figure 3
【課題】ガス流路を介した絶縁破壊を抑制する。【解決手段】半導体製造装置用部材１０は、上面にウエハ載置面２０ａを有するセラミックプレート２０と、セラミックプレート２０の下面２０ｂ側に設けられ、緻密質の本体部４５と、屈曲しながら本体部４５を厚み方向に貫通するガス流路部４６と、を有するプラグ４０と、セラミックプレート２０を厚み方向に貫通し、ガス流路部４６の上方に連通するガス放出孔２８と、セラミックプレート２０の下面２０ｂに接合され、ガス流路部４６の下方からガスを供給するガス供給通路６４を有する金属製の冷却プレート６０と、を備える。プラグ４０では、ガス流路部４６の全長のうちの少なくとも一部の区間が多孔質４７である。【選択図】図３
MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICE AND PLUG
半導体製造装置用部材及びプラグ
ISHIKAWA MASAKI (author) / AOKI YASUO (author)
2024-01-19
Patent
Electronic Resource
Japanese
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