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PRECURSOR COMPOSITION FOR FORMING AN AMORPHOUS METAL OXIDE SEMICONDUCTOR LAYER, METHOD FOR PRODUCING AN AMORPHOUS METAL OXIDE SEMICONDUCTOR LAYER
The invention provides a precursor composition for forming an amorphous metal oxide semiconductor layer, containing a metal salt, a primary amide, and a water-based solution. An amorphous metal oxide semiconductor layer is formed by use of the composition.
PRECURSOR COMPOSITION FOR FORMING AN AMORPHOUS METAL OXIDE SEMICONDUCTOR LAYER, METHOD FOR PRODUCING AN AMORPHOUS METAL OXIDE SEMICONDUCTOR LAYER
The invention provides a precursor composition for forming an amorphous metal oxide semiconductor layer, containing a metal salt, a primary amide, and a water-based solution. An amorphous metal oxide semiconductor layer is formed by use of the composition.
PRECURSOR COMPOSITION FOR FORMING AN AMORPHOUS METAL OXIDE SEMICONDUCTOR LAYER, METHOD FOR PRODUCING AN AMORPHOUS METAL OXIDE SEMICONDUCTOR LAYER
VORLÄUFERZUSAMMENSETZUNG ZUR BILDUNG EINER AMORPHEN METALLOXID-HALBLEITERSCHICHT, VERFAHREN ZU HERSTELLUNG EINER AMORPHEN METALLOXID-HALBLEITERSCHICHT
COMPOSITION DE PRÉCURSEUR POUR LA FORMATION D'UNE COUCHE SEMI-CONDUCTRICE D'OXYDE MÉTALLIQUE AMORPHE, PROCÉDÉ DE PRODUCTION D'UNE COUCHE SEMI-CONDUCTRICE D'OXYDE MÉTALLIQUE AMORPHE
HIROI YOSHIOMI (author) / MAEDA SHINICHI (author)
2019-07-24
Patent
Electronic Resource
English
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