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AMORPHOUS METAL OXIDE SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICE
An amorphous metal oxide semiconductor layer is formed by use of a precursor composition containing a metal salt, a primary amide, and a water-based solution. The amorphous metal oxide semiconductor layer produced via a method that includes applying the precursor composition onto a substrate to form a precursor film, and firing the film at a temperature of 150° C. or higher and lower than 300° C.
AMORPHOUS METAL OXIDE SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICE
An amorphous metal oxide semiconductor layer is formed by use of a precursor composition containing a metal salt, a primary amide, and a water-based solution. The amorphous metal oxide semiconductor layer produced via a method that includes applying the precursor composition onto a substrate to form a precursor film, and firing the film at a temperature of 150° C. or higher and lower than 300° C.
AMORPHOUS METAL OXIDE SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICE
HIROI YOSHIOMI (author) / MAEDA SHINICHI (author)
2020-11-05
Patent
Electronic Resource
English
AMORPHOUS METAL OXIDE SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICE
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