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POLYCRYSTALLINE DIELECTRIC THIN FILM AND CAPACITANCE ELEMENT
A polycrystalline dielectric thin film comprising a main component made of an oxynitride expressed by a general formula of (M(l) 1-x M(2) x )(M(3) 1-y M(4) y )(O 1-z N z ) 3 . 0 ¤ x ¤ 1, 0 ¤ y ¤ 1, and 0 < z < 1/3 are satisfied. A total sum of nominal valences of M(1), M(2), M(3), and M(4) is 14. A crystal structure of said oxynitride includes an octahedron structure comprised of a center atom, two 4a site atoms, and four 8h site atoms. Said center atom is M(3) or M(4). Said 4a site atom is O atom or N atom. Said 8h site atom is O atom or N atom. An angle ¸ formed between a straight line connecting two 4a site atoms and a c-axis direction of said crystal structure in said octahedron structure satisfies 0.5° ¤ ¸ ¤ 12°.
POLYCRYSTALLINE DIELECTRIC THIN FILM AND CAPACITANCE ELEMENT
A polycrystalline dielectric thin film comprising a main component made of an oxynitride expressed by a general formula of (M(l) 1-x M(2) x )(M(3) 1-y M(4) y )(O 1-z N z ) 3 . 0 ¤ x ¤ 1, 0 ¤ y ¤ 1, and 0 < z < 1/3 are satisfied. A total sum of nominal valences of M(1), M(2), M(3), and M(4) is 14. A crystal structure of said oxynitride includes an octahedron structure comprised of a center atom, two 4a site atoms, and four 8h site atoms. Said center atom is M(3) or M(4). Said 4a site atom is O atom or N atom. Said 8h site atom is O atom or N atom. An angle ¸ formed between a straight line connecting two 4a site atoms and a c-axis direction of said crystal structure in said octahedron structure satisfies 0.5° ¤ ¸ ¤ 12°.
POLYCRYSTALLINE DIELECTRIC THIN FILM AND CAPACITANCE ELEMENT
POLYKRISTALLINE DIELEKTRISCHE DÜNNSCHICHT UND KAPAZITÄTSELEMENT
FILM MINCE DIÉLECTRIQUE POLYCRISTALLIN ET ÉLÉMENT DE CAPACITÉ
UMEDA YUJI (author) / YAMAZAKI KUMIKO (author)
2018-10-10
Patent
Electronic Resource
English
POLYCRYSTALLINE DIELECTRIC THIN FILM AND CAPACITANCE ELEMENT
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