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Polycrystalline dielectric thin film and capacitance element
A polycrystalline dielectric thin film including a main component made of an oxynitride expressed by a general formula of (M(1)1-xM(2)x)(M(3)1-yM(4)y)(O1-zNz)3. 0≤x≤1, 0≤y≤1, and 0
Polycrystalline dielectric thin film and capacitance element
A polycrystalline dielectric thin film including a main component made of an oxynitride expressed by a general formula of (M(1)1-xM(2)x)(M(3)1-yM(4)y)(O1-zNz)3. 0≤x≤1, 0≤y≤1, and 0
Polycrystalline dielectric thin film and capacitance element
UMEDA YUJI (author) / YAMAZAKI KUMIKO (author)
2019-12-31
Patent
Electronic Resource
English
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