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HEAT DISSIPATION SUBSTRATE AND MODULE FOR SEMICONDUCTOR USING THE SAME
PROBLEM TO BE SOLVED: To provide a heat dissipation substrate which has a metal layer with less defects on the surface and whose linear expansion coefficient is within the range of 6.5 ppm/K or more and 15 ppm/K or less and thermal conductivity is 420 W/m K or more, and also to provide a module for a semiconductor using the same.SOLUTION: Powder of main metal, added metal and diamond are mixed together, the liquid phase sintering is performed after mixed powder is embossed, and a metal layer is formed on the surface of the obtained composite material by plating and later, heated and pressurized to perform the liquid phase sintering, thereby obtaining a heat dissipation substrate having the metal layer with less defects on the surface.SELECTED DRAWING: Figure 1
【課題】表面に欠陥の少ない金属層を持ち、線膨張係数が6.5ppm/K以上15ppm/K以下の範囲にあり、熱伝導率が420W/m・K以上である放熱基板と、それを使用した半導体用モジュールを提供することを課題とする。【解決手段】主金属と添加金属およびダイヤモンドの粉末を混合し、その混合粉末を型押しした後に液相焼結を行い、得られた複合材の表面にメッキにより金属層を形成し、のちに加熱し加圧する固相焼結を行うことにより、表面に欠陥の少ない金属層を有する放熱基板を得る。【選択図】図１
HEAT DISSIPATION SUBSTRATE AND MODULE FOR SEMICONDUCTOR USING THE SAME
PROBLEM TO BE SOLVED: To provide a heat dissipation substrate which has a metal layer with less defects on the surface and whose linear expansion coefficient is within the range of 6.5 ppm/K or more and 15 ppm/K or less and thermal conductivity is 420 W/m K or more, and also to provide a module for a semiconductor using the same.SOLUTION: Powder of main metal, added metal and diamond are mixed together, the liquid phase sintering is performed after mixed powder is embossed, and a metal layer is formed on the surface of the obtained composite material by plating and later, heated and pressurized to perform the liquid phase sintering, thereby obtaining a heat dissipation substrate having the metal layer with less defects on the surface.SELECTED DRAWING: Figure 1
【課題】表面に欠陥の少ない金属層を持ち、線膨張係数が6.5ppm/K以上15ppm/K以下の範囲にあり、熱伝導率が420W/m・K以上である放熱基板と、それを使用した半導体用モジュールを提供することを課題とする。【解決手段】主金属と添加金属およびダイヤモンドの粉末を混合し、その混合粉末を型押しした後に液相焼結を行い、得られた複合材の表面にメッキにより金属層を形成し、のちに加熱し加圧する固相焼結を行うことにより、表面に欠陥の少ない金属層を有する放熱基板を得る。【選択図】図１
HEAT DISSIPATION SUBSTRATE AND MODULE FOR SEMICONDUCTOR USING THE SAME
放熱基板と、それを使用した半導体用モジュール
FUKUI AKIRA (author)
2016-05-16
Patent
Electronic Resource
Japanese
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