A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
SPUTTERING TARGET, TRANSPARENT CONDUCTIVE OXIDE THIN FILM, AND CONDUCTIVE FILM
PROBLEM TO BE SOLVED: To provide a sputtering target capable of forming a transparent conductive oxide thin film having higher light transmittance and conductivity.SOLUTION: A sputtering target contains 60-88 mol% ZnO and 10-25 mol% GaO, and further contains at least one oxide selected from InOand AlO. The sum total of the contents of InOand AlOis 1-20 mol%. The sputtering target has a structure where particles containing GaOas a main component and particles containing at least one oxide selected from InOand AlOas a main component are dispersed in a matrix containing ZnO as a main component. The particles containing GaOas a main component and the particles containing at least one oxide selected from InOand AlOas a main component have an average particle diameter of 1.5-10 μm.SELECTED DRAWING: None
【課題】より高い光線透過性及び導電性を有する透明導電性酸化物薄膜を成膜可能なスパッタリングターゲットの提供。【解決手段】６０〜８８モル％のＺｎＯと１０〜２５モル％のＧａ２Ｏ３とを含み、更にＩｎ２Ｏ３、Ａｌ２Ｏ３から選ばれた少なくとも１種類の酸化物を含有したスパッタリングターゲットであって、Ｉｎ２Ｏ３及びＡｌ２Ｏ３の含有量の総和は１〜２０モル％であり、ＺｎＯを主成分とするマトリクス中にＧａ２Ｏ３を主成分とする粒子とＩｎ２Ｏ３、Ａｌ２Ｏ３から選ばれた少なくとも1種類の酸化物を主成分とする粒子とが分散した構造を有し、Ｇａ２Ｏ３を主成分とする粒子とＩｎ２Ｏ３、Ａｌ２Ｏ３から選ばれた少なくとも１種類の酸化物を主成分とする粒子の平均粒径が共に１．５〜１０μｍであるスパッタリングターゲット。【選択図】なし
SPUTTERING TARGET, TRANSPARENT CONDUCTIVE OXIDE THIN FILM, AND CONDUCTIVE FILM
PROBLEM TO BE SOLVED: To provide a sputtering target capable of forming a transparent conductive oxide thin film having higher light transmittance and conductivity.SOLUTION: A sputtering target contains 60-88 mol% ZnO and 10-25 mol% GaO, and further contains at least one oxide selected from InOand AlO. The sum total of the contents of InOand AlOis 1-20 mol%. The sputtering target has a structure where particles containing GaOas a main component and particles containing at least one oxide selected from InOand AlOas a main component are dispersed in a matrix containing ZnO as a main component. The particles containing GaOas a main component and the particles containing at least one oxide selected from InOand AlOas a main component have an average particle diameter of 1.5-10 μm.SELECTED DRAWING: None
【課題】より高い光線透過性及び導電性を有する透明導電性酸化物薄膜を成膜可能なスパッタリングターゲットの提供。【解決手段】６０〜８８モル％のＺｎＯと１０〜２５モル％のＧａ２Ｏ３とを含み、更にＩｎ２Ｏ３、Ａｌ２Ｏ３から選ばれた少なくとも１種類の酸化物を含有したスパッタリングターゲットであって、Ｉｎ２Ｏ３及びＡｌ２Ｏ３の含有量の総和は１〜２０モル％であり、ＺｎＯを主成分とするマトリクス中にＧａ２Ｏ３を主成分とする粒子とＩｎ２Ｏ３、Ａｌ２Ｏ３から選ばれた少なくとも1種類の酸化物を主成分とする粒子とが分散した構造を有し、Ｇａ２Ｏ３を主成分とする粒子とＩｎ２Ｏ３、Ａｌ２Ｏ３から選ばれた少なくとも１種類の酸化物を主成分とする粒子の平均粒径が共に１．５〜１０μｍであるスパッタリングターゲット。【選択図】なし
SPUTTERING TARGET, TRANSPARENT CONDUCTIVE OXIDE THIN FILM, AND CONDUCTIVE FILM
スパッタリングターゲット、透明導電性酸化物薄膜、及び導電性フィルム
KIUCHI KENICHI (author) / KAWAGUCHI YUKIO (author) / IINO MINORU (author)
2016-05-30
Patent
Electronic Resource
Japanese
SPUTTERING TARGET, TRANSPARENT CONDUCTIVE OXIDE THIN FILM, AND CONDUCTIVE FILM
| European Patent Office | 2016
SPUTTERING TARGET, TRANSPARENT CONDUCTIVE OXIDE THIN FILM AND CONDUCTIVE FILM
| European Patent Office | 2016