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ZnO-Ga2O3 BASED OXIDE SINTERED BODY TABLET FOR VAPOR DEPOSITION AND METHOD FOR MANUFACTURING THE SAME
PROBLEM TO BE SOLVED: To provide a ZnO-GaObased oxide sintered body tablet for vapor deposition hardly damaged even when irradiated with high output plasma, etc., and a method for manufacturing the same.SOLUTION: The oxide sintered body tablet manufactured by sintering a mixed powder of a first calcined raw material powder with a second uncalcined raw material powder has a Zn, Ga and In atom number percentage (%) of 1.75≤Ga/(Zn+Ga+In)×100≤3.54 and 1.25≤In/(Zn+Ga+In)×100≤2.54, a sintered density of 2.9 g/cmor more and 4.0 g/cmor less and a volume resistivity of 70 Ωcm or less. The average grain size derived from the first raw material powder is 10 μm or more and 20 μm or less, and the average grain size derived from the second raw material powder is 1 μm or more and 3 μm or less. The oxide sintered body includes a homologous structure compound represented by ZnO and InGaO(ZnO)m (m=1-10) and does not include a spinel structure compound represented by GaOand ZnGaOhaving high resistance.SELECTED DRAWING: Figure 1
【課題】高出力プラズマ等を照射しても破損し難い蒸着用ZnO−Ga2O3系酸化物焼結体タブレットとその製法の提供。【解決手段】仮焼された第一原料粉末と未仮焼の第二原料粉末との混合粉を焼成して製造されるタブレットであって、ZnとGaとInの原子数割合（％）が、1.75≦Ga/(Zn+Ga+In)×100≦3.54、1.25≦In/(Zn+Ga+In)×100≦2.54、焼結密度が2.9g/cm3以上4.0g/cm3以下、体積抵抗率が70Ω・cm以下であり、第一原料粉末に由来する平均結晶粒径が10μｍ以上20μｍ以下、第二原料粉末に由来する平均結晶粒径が1μｍ以上3μｍ以下であり、酸化物焼結体が、ZnOとInGaO3(ZnO)m(m=1〜10）で表されるホモロガス構造化合物を含有し、高抵抗のGa2O3とZnGa2O4で表されるスピネル構造化合物を含有しない酸化物焼結体タブレット。【選択図】図１
ZnO-Ga2O3 BASED OXIDE SINTERED BODY TABLET FOR VAPOR DEPOSITION AND METHOD FOR MANUFACTURING THE SAME
PROBLEM TO BE SOLVED: To provide a ZnO-GaObased oxide sintered body tablet for vapor deposition hardly damaged even when irradiated with high output plasma, etc., and a method for manufacturing the same.SOLUTION: The oxide sintered body tablet manufactured by sintering a mixed powder of a first calcined raw material powder with a second uncalcined raw material powder has a Zn, Ga and In atom number percentage (%) of 1.75≤Ga/(Zn+Ga+In)×100≤3.54 and 1.25≤In/(Zn+Ga+In)×100≤2.54, a sintered density of 2.9 g/cmor more and 4.0 g/cmor less and a volume resistivity of 70 Ωcm or less. The average grain size derived from the first raw material powder is 10 μm or more and 20 μm or less, and the average grain size derived from the second raw material powder is 1 μm or more and 3 μm or less. The oxide sintered body includes a homologous structure compound represented by ZnO and InGaO(ZnO)m (m=1-10) and does not include a spinel structure compound represented by GaOand ZnGaOhaving high resistance.SELECTED DRAWING: Figure 1
【課題】高出力プラズマ等を照射しても破損し難い蒸着用ZnO−Ga2O3系酸化物焼結体タブレットとその製法の提供。【解決手段】仮焼された第一原料粉末と未仮焼の第二原料粉末との混合粉を焼成して製造されるタブレットであって、ZnとGaとInの原子数割合（％）が、1.75≦Ga/(Zn+Ga+In)×100≦3.54、1.25≦In/(Zn+Ga+In)×100≦2.54、焼結密度が2.9g/cm3以上4.0g/cm3以下、体積抵抗率が70Ω・cm以下であり、第一原料粉末に由来する平均結晶粒径が10μｍ以上20μｍ以下、第二原料粉末に由来する平均結晶粒径が1μｍ以上3μｍ以下であり、酸化物焼結体が、ZnOとInGaO3(ZnO)m(m=1〜10）で表されるホモロガス構造化合物を含有し、高抵抗のGa2O3とZnGa2O4で表されるスピネル構造化合物を含有しない酸化物焼結体タブレット。【選択図】図１
ZnO-Ga2O3 BASED OXIDE SINTERED BODY TABLET FOR VAPOR DEPOSITION AND METHOD FOR MANUFACTURING THE SAME
蒸着用ＺｎＯ−Ｇａ２Ｏ３系酸化物焼結体タブレットとその製造方法
HAYATSU NATSUKI (author)
2017-04-20
Patent
Electronic Resource
Japanese
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