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PIEZOELECTRIC ELEMENT, METHOD OF MANUFACTURING PIEZOELECTRIC ELEMENT, PIEZOELECTRIC ACTUATOR AND ELECTRONIC APPARATUS
PROBLEM TO BE SOLVED: To provide a thin film piezoelectric element in which change of piezoelectric constant is small during continuous driving.SOLUTION: In a piezoelectric element including a substrate, an electrode, and a piezoelectric film, the piezoelectric film contains an oxide containing Ba, Ca, Ti and Zr, and at least one element of Mn and Bi. Mole ratio x of Ca to the sum of Ba and Ca is 0.09≤x≤0.30, the value of mole ratio y of Zr to the sum of Ti, Zr and Sn is 0.025≤y≤0.085, and the mole ratio z of Sn to the sum of Ti, Zr and Sn is 0≤z≤0.02. The total content Sof Mn and Bi to 1 mole of the oxide is 0.0020-0.0150 mole, and the total content Sof Mn and Bi in a region adjacent to one electrode of the piezoelectric film is smaller than the S.SELECTED DRAWING: Figure 1
【課題】連続駆動における圧電定数の変化が小さい薄膜型の圧電素子を提供する。【解決手段】基板、電極、および圧電膜を備えた圧電素子であって、前記圧電膜はＢａ、Ｃａ、Ｔｉ、およびＺｒを含む酸化物と、ＭｎとＢｉの少なくとも一方の元素を含み、ＢａとＣａの和に対するＣａのモル比であるｘの値が０．０９≦ｘ≦０．３０であり、Ｔｉ、ＺｒおよびＳｎの和に対するＺｒのモル比であるｙの値が０．０２５≦ｙ≦０．０８５であり、Ｔｉ、ＺｒおよびＳｎの和に対するＳｎのモル比であるｚの値が０≦ｚ≦０．０２であり、前記酸化物１モルに対する前記ＭｎおよびＢｉの合計含有量Ｓａｖｅが、０．００２０モル以上０．０１５０モル以下であり、前記圧電膜の一方の電極に隣接する領域における前記ＭｎおよびＢｉの合計含有量Ｓｂｏｕが、前記Ｓａｖｅより小さいことを特徴とする。【選択図】図１
PIEZOELECTRIC ELEMENT, METHOD OF MANUFACTURING PIEZOELECTRIC ELEMENT, PIEZOELECTRIC ACTUATOR AND ELECTRONIC APPARATUS
PROBLEM TO BE SOLVED: To provide a thin film piezoelectric element in which change of piezoelectric constant is small during continuous driving.SOLUTION: In a piezoelectric element including a substrate, an electrode, and a piezoelectric film, the piezoelectric film contains an oxide containing Ba, Ca, Ti and Zr, and at least one element of Mn and Bi. Mole ratio x of Ca to the sum of Ba and Ca is 0.09≤x≤0.30, the value of mole ratio y of Zr to the sum of Ti, Zr and Sn is 0.025≤y≤0.085, and the mole ratio z of Sn to the sum of Ti, Zr and Sn is 0≤z≤0.02. The total content Sof Mn and Bi to 1 mole of the oxide is 0.0020-0.0150 mole, and the total content Sof Mn and Bi in a region adjacent to one electrode of the piezoelectric film is smaller than the S.SELECTED DRAWING: Figure 1
【課題】連続駆動における圧電定数の変化が小さい薄膜型の圧電素子を提供する。【解決手段】基板、電極、および圧電膜を備えた圧電素子であって、前記圧電膜はＢａ、Ｃａ、Ｔｉ、およびＺｒを含む酸化物と、ＭｎとＢｉの少なくとも一方の元素を含み、ＢａとＣａの和に対するＣａのモル比であるｘの値が０．０９≦ｘ≦０．３０であり、Ｔｉ、ＺｒおよびＳｎの和に対するＺｒのモル比であるｙの値が０．０２５≦ｙ≦０．０８５であり、Ｔｉ、ＺｒおよびＳｎの和に対するＳｎのモル比であるｚの値が０≦ｚ≦０．０２であり、前記酸化物１モルに対する前記ＭｎおよびＢｉの合計含有量Ｓａｖｅが、０．００２０モル以上０．０１５０モル以下であり、前記圧電膜の一方の電極に隣接する領域における前記ＭｎおよびＢｉの合計含有量Ｓｂｏｕが、前記Ｓａｖｅより小さいことを特徴とする。【選択図】図１
PIEZOELECTRIC ELEMENT, METHOD OF MANUFACTURING PIEZOELECTRIC ELEMENT, PIEZOELECTRIC ACTUATOR AND ELECTRONIC APPARATUS
圧電素子、圧電素子の製造方法、圧電アクチュエータおよび電子機器
KUBOTA JUN (author) / MATSUDA KATAYOSHI (author) / MIURA KAORU (author)
2017-06-15
Patent
Electronic Resource
Japanese
IPC:
H01L
Halbleiterbauelemente
,
SEMICONDUCTOR DEVICES
/
B41J
TYPEWRITERS
,
Schreibmaschinen
/
B81B
Mikrostrukturbauelemente oder -systeme, z.B. mikromechanische Bauelemente
,
MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
/
C04B
Kalk
,
LIME
/
G01C
Messen von Entfernungen, Höhen, Neigungen oder Richtungen
,
MEASURING DISTANCES, LEVELS OR BEARINGS
/
G02B
Optische Elemente, Systeme oder Geräte
,
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
/
G03B
APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM
,
Geräte oder Anordnungen zum Aufnehmen, Projizieren oder Betrachten von Fotografien
/
H02N
Elektrische Maschinen, soweit nicht anderweitig vorgesehen
,
ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
/
H03H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
,
Scheinwiderstandsnetzwerke, z.B. Resonanzkreise
/
H04R
LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS
,
Lautsprecher, Mikrofone, Schallplatten-Tonabnehmer oder ähnliche akustische, elektromechanische Wandler
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