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SEMICONDUCTOR DEVICE MANUFACTURING METHOD
PROBLEM TO BE SOLVED: To solve a problem occurring in the case where an oxide semiconductor is deposited by sputtering that deviation in composition occurs depending on a material of the oxide semiconductor when a composition of a sputtering target and a composition of a film deposited by using the sputtering target are compared.SOLUTION: A manufacturing method of a zinc oxide-containing sputtering target comprises the steps of: forming a crystal preliminarily containing zinc oxide; crushing the crystal and subsequently, adding and mixing zinc oxide by a predetermine quantity; and subsequently, sintering the mixed substance to manufacture the sputtering target. A composition of the sputtering target is controlled by making zinc be contained more than that in a finally obtained film having an intended composition in consideration of a quantity of zinc which is reduced at the time of deposition by sputtering or a quantity of zinc which is reduced at the time of sintering.SELECTED DRAWING: Figure 1
【課題】酸化物半導体をスパッタ法により成膜する場合、スパッタリングターゲットの組成と、そのスパッタリングターゲットを用いて成膜した膜の組成とを比べると、酸化物半導体の材料によっては組成のずれが生じる。【解決手段】酸化亜鉛を含むスパッタリングターゲットの作製において、予め酸化亜鉛を含む結晶を形成し、その結晶を粉砕した後、酸化亜鉛を所定量加えて混合し、その後、焼結させてスパッタリングターゲットを作製する。このスパッタリングターゲットの組成は、最終的に得られる所望の組成を有する膜よりも亜鉛を多く含ませて、スパッタ法による成膜時に減少する亜鉛の量や、焼結時に減少する亜鉛の量などを考慮して調整する。【選択図】図１
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
PROBLEM TO BE SOLVED: To solve a problem occurring in the case where an oxide semiconductor is deposited by sputtering that deviation in composition occurs depending on a material of the oxide semiconductor when a composition of a sputtering target and a composition of a film deposited by using the sputtering target are compared.SOLUTION: A manufacturing method of a zinc oxide-containing sputtering target comprises the steps of: forming a crystal preliminarily containing zinc oxide; crushing the crystal and subsequently, adding and mixing zinc oxide by a predetermine quantity; and subsequently, sintering the mixed substance to manufacture the sputtering target. A composition of the sputtering target is controlled by making zinc be contained more than that in a finally obtained film having an intended composition in consideration of a quantity of zinc which is reduced at the time of deposition by sputtering or a quantity of zinc which is reduced at the time of sintering.SELECTED DRAWING: Figure 1
【課題】酸化物半導体をスパッタ法により成膜する場合、スパッタリングターゲットの組成と、そのスパッタリングターゲットを用いて成膜した膜の組成とを比べると、酸化物半導体の材料によっては組成のずれが生じる。【解決手段】酸化亜鉛を含むスパッタリングターゲットの作製において、予め酸化亜鉛を含む結晶を形成し、その結晶を粉砕した後、酸化亜鉛を所定量加えて混合し、その後、焼結させてスパッタリングターゲットを作製する。このスパッタリングターゲットの組成は、最終的に得られる所望の組成を有する膜よりも亜鉛を多く含ませて、スパッタ法による成膜時に減少する亜鉛の量や、焼結時に減少する亜鉛の量などを考慮して調整する。【選択図】図１
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
半導体装置の作製方法
YAMAZAKI SHUNPEI (author) / MARUYAMA YOSHIKI (author)
2017-06-15
Patent
Electronic Resource
Japanese
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