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SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR MEMORY DEVICE
A semiconductor device includes a semiconductor substrate, a word line trench and a word line structure. The word line trench includes a first word line trench and a second word line trench. The word line structure includes a first word line structure part and a second word line structure part connected to each other. The first word line structure part is formed in the first word line trench, and the second word line structure part is formed in the second word line trench; and the first word line structure part includes an avoidance region, and the top surface of the avoidance region is aligned with the top surface of the second word line structure part, and the avoidance region is provided with insulating material.
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR MEMORY DEVICE
A semiconductor device includes a semiconductor substrate, a word line trench and a word line structure. The word line trench includes a first word line trench and a second word line trench. The word line structure includes a first word line structure part and a second word line structure part connected to each other. The first word line structure part is formed in the first word line trench, and the second word line structure part is formed in the second word line trench; and the first word line structure part includes an avoidance region, and the top surface of the avoidance region is aligned with the top surface of the second word line structure part, and the avoidance region is provided with insulating material.
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR MEMORY DEVICE
MEI XIAOBO (author)
2023-02-16
Patent
Electronic Resource
English
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