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A platform for research: civil engineering, architecture and urbanism
INDIUM OXIDE-ZINC OXIDE-BASED (IZO) SPUTTERING TARGET, AND PRODUCTION METHOD THEREOF
PROBLEM TO BE SOLVED: To provide a production method of an indium oxide-zinc oxide-based oxide (IZO) sintered body sputtering target capable of suppressing generation of arcing (abnormal discharge) during sputtering, and having a small difference of a bulk resistivity in a sputtering plane.SOLUTION: In a production method of an IZO sintered body sputtering target, steps for raising a temperature of a compact obtained by press-forming raw material powder from a room temperature up to a sintering temperature comprise steps for: retaining a middle retention temperature of 600-800°C for 1-10 hours; raising a temperature from the middle retention temperature up to the sintering temperature at the rate of 0.2-2.0°C/min; and sintering for 1-100 hours at the sintering temperature of 1,350-1,500°C.SELECTED DRAWING: None
【課題】スパッタリングの際にアーキング（異常放電）の発生を抑制することができる、スパッタ面内のバルク抵抗率の差が小さい、酸化インジウム−酸化亜鉛酸化物（ＩＺＯ）焼結体スパッタリングターゲットの製造方法の提供。【解決手段】原料粉末をプレス成形した成形体を室温から焼結温度まで昇温する工程において、途中保持温度を６００〜８００℃とし、１〜１０時間保持する工程、途中保持温度から、焼結温度まで０．２〜２．０℃／ｍｉｎで昇温する工程、焼結温度を１３５０〜１５００℃とし，１〜１００時間で焼結する工程からなるＩＺＯ焼結体スパッタリングターゲットの製造方法。【選択図】なし
INDIUM OXIDE-ZINC OXIDE-BASED (IZO) SPUTTERING TARGET, AND PRODUCTION METHOD THEREOF
PROBLEM TO BE SOLVED: To provide a production method of an indium oxide-zinc oxide-based oxide (IZO) sintered body sputtering target capable of suppressing generation of arcing (abnormal discharge) during sputtering, and having a small difference of a bulk resistivity in a sputtering plane.SOLUTION: In a production method of an IZO sintered body sputtering target, steps for raising a temperature of a compact obtained by press-forming raw material powder from a room temperature up to a sintering temperature comprise steps for: retaining a middle retention temperature of 600-800°C for 1-10 hours; raising a temperature from the middle retention temperature up to the sintering temperature at the rate of 0.2-2.0°C/min; and sintering for 1-100 hours at the sintering temperature of 1,350-1,500°C.SELECTED DRAWING: None
【課題】スパッタリングの際にアーキング（異常放電）の発生を抑制することができる、スパッタ面内のバルク抵抗率の差が小さい、酸化インジウム−酸化亜鉛酸化物（ＩＺＯ）焼結体スパッタリングターゲットの製造方法の提供。【解決手段】原料粉末をプレス成形した成形体を室温から焼結温度まで昇温する工程において、途中保持温度を６００〜８００℃とし、１〜１０時間保持する工程、途中保持温度から、焼結温度まで０．２〜２．０℃／ｍｉｎで昇温する工程、焼結温度を１３５０〜１５００℃とし，１〜１００時間で焼結する工程からなるＩＺＯ焼結体スパッタリングターゲットの製造方法。【選択図】なし
INDIUM OXIDE-ZINC OXIDE-BASED (IZO) SPUTTERING TARGET, AND PRODUCTION METHOD THEREOF
酸化インジウム−酸化亜鉛系（ＩＺＯ）スパッタリングターゲット及びその製造方法
KAKENO TAKASHI (author)
2017-10-12
Patent
Electronic Resource
Japanese
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