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SUBSTRATE MANUFACTURING METHOD
To provide a substrate manufacturing method capable of easily forming a groove or space having a desired shape even when firing is performed at a high temperature.SOLUTION: When a ceramic substrate 1 is manufactured, a boron nitride paste containing boron nitride is used as a disappearance material, and a borosilicate glass having a softening temperature of 800°C or higher is used as a part of the material of the ceramic substrate 1. Then, co-firing is performed under a firing condition of firing at 950°C or higher in an oxidizing atmosphere to manufacture the ceramic substrate 1 having a groove 3. Since the ceramic substrate 1 is manufactured by such a manufacturing method, the groove 3 having a desired shape can be easily formed even when firing is performed at a high temperature of 950°C or higher.SELECTED DRAWING: Figure 2
【課題】高い温度で焼成する場合でも、所望の形状の溝部や空間部を容易に形成することができる基板の製造方法を提供すること。【解決手段】セラミック基板1を製造する場合には、消失材料として窒化ホウ素を含む窒化ホウ素ペーストを用いるとともに、セラミック基板1の材料の一部に軟化温度が800℃以上のホウ珪酸系ガラスを用いる。そして、酸化雰囲気中にて950℃以上で焼成する焼成条件にて、同時焼成を行って、溝部3を有するセラミック基板1を製造する。このような製造方法によってセラミック基板1を製造するので、950℃以上の高い温度で焼成した場合でも、所望の形状の溝部3を容易に形成することができる。【選択図】図2
SUBSTRATE MANUFACTURING METHOD
To provide a substrate manufacturing method capable of easily forming a groove or space having a desired shape even when firing is performed at a high temperature.SOLUTION: When a ceramic substrate 1 is manufactured, a boron nitride paste containing boron nitride is used as a disappearance material, and a borosilicate glass having a softening temperature of 800°C or higher is used as a part of the material of the ceramic substrate 1. Then, co-firing is performed under a firing condition of firing at 950°C or higher in an oxidizing atmosphere to manufacture the ceramic substrate 1 having a groove 3. Since the ceramic substrate 1 is manufactured by such a manufacturing method, the groove 3 having a desired shape can be easily formed even when firing is performed at a high temperature of 950°C or higher.SELECTED DRAWING: Figure 2
【課題】高い温度で焼成する場合でも、所望の形状の溝部や空間部を容易に形成することができる基板の製造方法を提供すること。【解決手段】セラミック基板1を製造する場合には、消失材料として窒化ホウ素を含む窒化ホウ素ペーストを用いるとともに、セラミック基板1の材料の一部に軟化温度が800℃以上のホウ珪酸系ガラスを用いる。そして、酸化雰囲気中にて950℃以上で焼成する焼成条件にて、同時焼成を行って、溝部3を有するセラミック基板1を製造する。このような製造方法によってセラミック基板1を製造するので、950℃以上の高い温度で焼成した場合でも、所望の形状の溝部3を容易に形成することができる。【選択図】図2
SUBSTRATE MANUFACTURING METHOD
基板の製造方法
HORIUCHI KAZUKI (author) / KATO TATSUYA (author) / ITO MASANORI (author) / SAWAI TATSUYA (author)
2019-03-22
Patent
Electronic Resource
Japanese
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