A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
METAL-CERAMIC BONDED SUBSTRATE AND MANUFACTURING METHOD THEREOF
To provide a metal-ceramic bonded substrate in which a bond strength of an aluminum plate directly bonded to a ceramic substrate is made higher than the prior arts, and a manufacturing method thereof.SOLUTION: A ceramic substrate 10 is disposed within a casting mold 20, and the casting mold 20 is put into a furnace. An oxygen concentration within the furnace is reduced to 25 ppm or lower and a dew point is reduced to -45°C or lower. A molten metal of aluminum is poured in contact with a surface of the ceramic substrate 10 and the molten metal is cooled and solidified thereafter. Therefore, a metal plate 14 for circuit pattern consisting of aluminum is formed on one surface of the ceramic substrate 10 and one surface of the metal plate 14 for circuit pattern is directly bonded to the ceramic substrate 10. A metal base plate 12 consisting of aluminum is formed on the other surface of the ceramic substrate 10 and directly bonded to the ceramic substrate 10, thereby manufacturing a metal-ceramic bonded substrate.SELECTED DRAWING: Figure 2A
【課題】セラミックス基板に直接接合したアルミニウム板の接合強度が従来よりも高い金属−セラミックス接合基板およびその製造方法を提供する。【解決手段】鋳型２０内にセラミックス基板１０を配置し、鋳型２０を炉内に入れ、炉内の酸素濃度を２５ｐｐｍ以下、露点を−４５℃以下まで低下させ、セラミックス基板１０の表面に接触するようにアルミニウムの溶湯を注湯した後に溶湯を冷却して固化させることにより、アルミニウムからなる回路パターン用金属板１４をセラミックス基板１０の一方の面に形成してその回路パターン用金属板１４の一方の面をセラミックス基板１０に直接接合させるとともに、アルミニウムからなる金属ベース板１２をセラミックス基板１０の他方の面に形成してセラミックス基板１０に直接接合させることにより、金属−セラミックス接合基板を製造する。【選択図】図２Ａ
METAL-CERAMIC BONDED SUBSTRATE AND MANUFACTURING METHOD THEREOF
To provide a metal-ceramic bonded substrate in which a bond strength of an aluminum plate directly bonded to a ceramic substrate is made higher than the prior arts, and a manufacturing method thereof.SOLUTION: A ceramic substrate 10 is disposed within a casting mold 20, and the casting mold 20 is put into a furnace. An oxygen concentration within the furnace is reduced to 25 ppm or lower and a dew point is reduced to -45°C or lower. A molten metal of aluminum is poured in contact with a surface of the ceramic substrate 10 and the molten metal is cooled and solidified thereafter. Therefore, a metal plate 14 for circuit pattern consisting of aluminum is formed on one surface of the ceramic substrate 10 and one surface of the metal plate 14 for circuit pattern is directly bonded to the ceramic substrate 10. A metal base plate 12 consisting of aluminum is formed on the other surface of the ceramic substrate 10 and directly bonded to the ceramic substrate 10, thereby manufacturing a metal-ceramic bonded substrate.SELECTED DRAWING: Figure 2A
【課題】セラミックス基板に直接接合したアルミニウム板の接合強度が従来よりも高い金属−セラミックス接合基板およびその製造方法を提供する。【解決手段】鋳型２０内にセラミックス基板１０を配置し、鋳型２０を炉内に入れ、炉内の酸素濃度を２５ｐｐｍ以下、露点を−４５℃以下まで低下させ、セラミックス基板１０の表面に接触するようにアルミニウムの溶湯を注湯した後に溶湯を冷却して固化させることにより、アルミニウムからなる回路パターン用金属板１４をセラミックス基板１０の一方の面に形成してその回路パターン用金属板１４の一方の面をセラミックス基板１０に直接接合させるとともに、アルミニウムからなる金属ベース板１２をセラミックス基板１０の他方の面に形成してセラミックス基板１０に直接接合させることにより、金属−セラミックス接合基板を製造する。【選択図】図２Ａ
METAL-CERAMIC BONDED SUBSTRATE AND MANUFACTURING METHOD THEREOF
金属−セラミックス接合基板およびその製造方法
OSANAI HIDEYO (author)
2020-08-31
Patent
Electronic Resource
Japanese
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