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SPUTTERING TARGET AND MANUFACTURING METHOD OF SPUTTERING TARGET
To suppress effectively generation of arcing and particles, without increasing a Zn content too much.SOLUTION: In a sputtering target containing In, Sn, Zn, O, following equations are satisfied: Sn/(In+Sn+Zn)=7 at%-10 at%, Zn/(In+Sn+Zn)=0.5 at%-3 at%, an atomic ratio (Sn/Zn) between Sn and Zn is 2.3-20, a peak intensity ratio (Sn3In4O12/In2O3) of Sn3In4O12 crystal phase to In2O3 crystal phase in XRD measurement is 0.10 or less, and an area ratio of the Sn3In4O12 crystal phase is 10% or less.SELECTED DRAWING: None
【課題】Ｚｎの含有量をそれほど増大させることなしに、アーキング及びパーティクルの発生を有効に抑制する。【解決手段】Ｉｎ、Ｓｎ、Ｚｎ、Ｏを含み、Ｓｎ／（Ｉｎ＋Ｓｎ＋Ｚｎ）＝７ａｔ％〜１０ａｔ％、Ｚｎ／（Ｉｎ＋Ｓｎ＋Ｚｎ）＝０．５ａｔ％〜３ａｔ％、ＳｎとＺｎの原子数比（Ｓｎ／Ｚｎ）が２．３〜２０であり、ＸＲＤ測定によるＩｎ2Ｏ3結晶相に対するＳｎ3Ｉｎ4Ｏ12結晶相のピーク強度比（Ｓｎ3Ｉｎ4Ｏ12／Ｉｎ2Ｏ3）が０．１０以下であり、Ｓｎ3Ｉｎ4Ｏ12結晶相の面積率が１０％以下であるスパッタリングターゲットである。【選択図】なし
SPUTTERING TARGET AND MANUFACTURING METHOD OF SPUTTERING TARGET
To suppress effectively generation of arcing and particles, without increasing a Zn content too much.SOLUTION: In a sputtering target containing In, Sn, Zn, O, following equations are satisfied: Sn/(In+Sn+Zn)=7 at%-10 at%, Zn/(In+Sn+Zn)=0.5 at%-3 at%, an atomic ratio (Sn/Zn) between Sn and Zn is 2.3-20, a peak intensity ratio (Sn3In4O12/In2O3) of Sn3In4O12 crystal phase to In2O3 crystal phase in XRD measurement is 0.10 or less, and an area ratio of the Sn3In4O12 crystal phase is 10% or less.SELECTED DRAWING: None
【課題】Ｚｎの含有量をそれほど増大させることなしに、アーキング及びパーティクルの発生を有効に抑制する。【解決手段】Ｉｎ、Ｓｎ、Ｚｎ、Ｏを含み、Ｓｎ／（Ｉｎ＋Ｓｎ＋Ｚｎ）＝７ａｔ％〜１０ａｔ％、Ｚｎ／（Ｉｎ＋Ｓｎ＋Ｚｎ）＝０．５ａｔ％〜３ａｔ％、ＳｎとＺｎの原子数比（Ｓｎ／Ｚｎ）が２．３〜２０であり、ＸＲＤ測定によるＩｎ2Ｏ3結晶相に対するＳｎ3Ｉｎ4Ｏ12結晶相のピーク強度比（Ｓｎ3Ｉｎ4Ｏ12／Ｉｎ2Ｏ3）が０．１０以下であり、Ｓｎ3Ｉｎ4Ｏ12結晶相の面積率が１０％以下であるスパッタリングターゲットである。【選択図】なし
SPUTTERING TARGET AND MANUFACTURING METHOD OF SPUTTERING TARGET
スパッタリングターゲットおよび、スパッタリングターゲットの製造方法
MIZUFUJI KOSUKE (author)
2020-10-08
Patent
Electronic Resource
Japanese
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