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SPUTTERING TARGET AND METHOD OF MANUFACTURING SPUTTERING TARGET
The present invention relates to a sputtering target and a manufacturing method thereof. An object of the present invention is to provide a sputtering target capable of suppressing the amount of fine nodules which lead to an increase in substrate particles during sputtering, and a manufacturing method thereof. In the ceramics sputtering target of the present invention, surface roughness Ra of the sputtered surface is equal to or less than 0.5 μm, and an Svk value measured by a laser microscope is equal to or less than 1.1 μm.
본 발명은 스퍼터링 시에 있어서 기판 파티클 증가로 연결되는 미세 노듈의 발생량을 억제할 수 있는 스퍼터링 타깃 및 그 제조 방법을 제공하는 것을 과제로 한다. 스퍼터면의 표면 조도 Ra가 0.5㎛ 이하이고, 또한 레이저 현미경으로 측정되는 Svk값이 1.1㎛ 이하인 세라믹스계 스퍼터링 타깃.
SPUTTERING TARGET AND METHOD OF MANUFACTURING SPUTTERING TARGET
The present invention relates to a sputtering target and a manufacturing method thereof. An object of the present invention is to provide a sputtering target capable of suppressing the amount of fine nodules which lead to an increase in substrate particles during sputtering, and a manufacturing method thereof. In the ceramics sputtering target of the present invention, surface roughness Ra of the sputtered surface is equal to or less than 0.5 μm, and an Svk value measured by a laser microscope is equal to or less than 1.1 μm.
본 발명은 스퍼터링 시에 있어서 기판 파티클 증가로 연결되는 미세 노듈의 발생량을 억제할 수 있는 스퍼터링 타깃 및 그 제조 방법을 제공하는 것을 과제로 한다. 스퍼터면의 표면 조도 Ra가 0.5㎛ 이하이고, 또한 레이저 현미경으로 측정되는 Svk값이 1.1㎛ 이하인 세라믹스계 스퍼터링 타깃.
SPUTTERING TARGET AND METHOD OF MANUFACTURING SPUTTERING TARGET
스퍼터링 타깃 및 그 제조 방법
MIZUGUCHI TOMOJI (author) / SASAOKA HIDETOSHI (author) / NAKAMURA HARUHI (author) / GORAI ATSUSHI (author)
2020-09-15
Patent
Electronic Resource
Korean
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