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COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE HAVING COMPOSITE SUBSTRATE
To provided a composite substrate and a method for manufacturing the same.SOLUTION: A composite substrate 14 is formed from a composite material containing diamond particles 10 and metal, and has a base layer 180 with a first surface 180A and a second surface 180B opposite the first surface, a bottom surface 82B bonded to the first surface of the base layer, a flat layer 82 with a top surface 82A having a surface roughness Ra of 10 nm or less, and an insulating layer 84 bonded directly to the top surface of the flat layer.SELECTED DRAWING: Figure 4A
【課題】複合基板及びその製造方法を提供する。【解決手段】複合基板14は、ダイヤモンド粒子10と金属を含む複合材料から形成され、第1表面180A及び第1表面の反対側に第2表面180Bを有する基層180と、基層の第1表面に結合される下面82Bと、表面粗さRaが10nm以下である上面82Aを有する平坦層82と、平坦層の上面に直接接合された絶縁層84と、を備える。【選択図】図4A
COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE HAVING COMPOSITE SUBSTRATE
To provided a composite substrate and a method for manufacturing the same.SOLUTION: A composite substrate 14 is formed from a composite material containing diamond particles 10 and metal, and has a base layer 180 with a first surface 180A and a second surface 180B opposite the first surface, a bottom surface 82B bonded to the first surface of the base layer, a flat layer 82 with a top surface 82A having a surface roughness Ra of 10 nm or less, and an insulating layer 84 bonded directly to the top surface of the flat layer.SELECTED DRAWING: Figure 4A
【課題】複合基板及びその製造方法を提供する。【解決手段】複合基板14は、ダイヤモンド粒子10と金属を含む複合材料から形成され、第1表面180A及び第1表面の反対側に第2表面180Bを有する基層180と、基層の第1表面に結合される下面82Bと、表面粗さRaが10nm以下である上面82Aを有する平坦層82と、平坦層の上面に直接接合された絶縁層84と、を備える。【選択図】図4A
COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE HAVING COMPOSITE SUBSTRATE
複合基板およびその製造方法、ならびに当該複合基板を備える半導体装置
ICHIKAWA MASATSUGU (author) / YAMADA SHOICHI (author) / KIHARA TORA (author) / MATSUZAKA YUTAKA (author)
2022-04-11
Patent
Electronic Resource
Japanese
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