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OXIDE SPUTTERING TARGET, AND METHOD OF PRODUCING OXIDE SPUTTERING TARGET
To provide an oxide sputtering target capable of stably producing a uniform oxide film with little variation in film resistance in the initial/intermediate/final stages of film deposition by sputtering, and a method of producing the oxide sputtering target.SOLUTION: The oxide sputtering target constituted of a sintered oxide comprising Zn as a metal component as a primary component, in which the coefficient of variation of the specific resistance value in the thickness direction is 0.20 or less. The method of producing an oxide sputtering target comprises: a calcination step S02 of calcining raw material powder to be sintered; a crushing step S03 of crushing the calcined raw material powder to be sintered; and a sintering step S04 of sintering the crushed calcined raw material powder to be sintered to obtain a sintered body. The degree of vacuum in the calcination step is in a range of 15 Pa or less, the calcination temperature is in a range of 600°C or more and 1000°C or less, and the retention time at the calcination temperature is 2 hours or more and 6 hours or less.SELECTED DRAWING: Figure 1
【課題】スパッタ成膜の初期／中期／終期で膜抵抗のばらつきが少なく、均一な酸化物膜を安定して成膜可能な酸化物スパッタリングターゲット、および、この酸化物スパッタリングターゲットの製造方法を提供する。【解決手段】金属成分としてＺｎを主成分とする酸化物焼結体からなり、厚さ方向における比抵抗値の変動係数が０．２０以下であることを特徴とする。焼結原料粉を仮焼成する仮焼成工程Ｓ０２と、焼成した焼結原料粉を解砕する解砕工程Ｓ０３と、解砕した焼結原料粉を焼結して焼結体を得る焼結工程Ｓ０４と、を備えており、前記仮焼成工程における真空度が１５Ｐａ以下の範囲内、焼成温度が６００℃以上１０００℃以下の範囲内、焼成温度での保持時間が２時間以上６時間以下の範囲内とされていることを特徴とする。【選択図】図１
OXIDE SPUTTERING TARGET, AND METHOD OF PRODUCING OXIDE SPUTTERING TARGET
To provide an oxide sputtering target capable of stably producing a uniform oxide film with little variation in film resistance in the initial/intermediate/final stages of film deposition by sputtering, and a method of producing the oxide sputtering target.SOLUTION: The oxide sputtering target constituted of a sintered oxide comprising Zn as a metal component as a primary component, in which the coefficient of variation of the specific resistance value in the thickness direction is 0.20 or less. The method of producing an oxide sputtering target comprises: a calcination step S02 of calcining raw material powder to be sintered; a crushing step S03 of crushing the calcined raw material powder to be sintered; and a sintering step S04 of sintering the crushed calcined raw material powder to be sintered to obtain a sintered body. The degree of vacuum in the calcination step is in a range of 15 Pa or less, the calcination temperature is in a range of 600°C or more and 1000°C or less, and the retention time at the calcination temperature is 2 hours or more and 6 hours or less.SELECTED DRAWING: Figure 1
【課題】スパッタ成膜の初期／中期／終期で膜抵抗のばらつきが少なく、均一な酸化物膜を安定して成膜可能な酸化物スパッタリングターゲット、および、この酸化物スパッタリングターゲットの製造方法を提供する。【解決手段】金属成分としてＺｎを主成分とする酸化物焼結体からなり、厚さ方向における比抵抗値の変動係数が０．２０以下であることを特徴とする。焼結原料粉を仮焼成する仮焼成工程Ｓ０２と、焼成した焼結原料粉を解砕する解砕工程Ｓ０３と、解砕した焼結原料粉を焼結して焼結体を得る焼結工程Ｓ０４と、を備えており、前記仮焼成工程における真空度が１５Ｐａ以下の範囲内、焼成温度が６００℃以上１０００℃以下の範囲内、焼成温度での保持時間が２時間以上６時間以下の範囲内とされていることを特徴とする。【選択図】図１
OXIDE SPUTTERING TARGET, AND METHOD OF PRODUCING OXIDE SPUTTERING TARGET
酸化物スパッタリングターゲット、および、酸化物スパッタリングターゲットの製造方法
OKANO SUSUMU (author) / NISHIMURA KAZUYASU (author)
2022-07-15
Patent
Electronic Resource
Japanese
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