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SPUTTERING TARGET MATERIAL AND METHOD FOR MANUFACTURING SPUTTERING TARGET MATERIAL
To obtain a piezoelectric laminate with a large diameter piezoelectric film with uniform film quality, with no localized defective areas appearing in the entire area on the main surface except for the peripheral edges.SOLUTION: A piezoelectric film is composed of a substrate having a main surface having a diameter of 3 inches or more and a perovskite structure of alkali niobium oxide containing potassium, sodium, niobium, and oxygen, and deposited on the substrate, and the width at half maximum of the X-ray rocking curve of the (001) plane in the X-ray diffraction measurement of the piezoelectric film is within the range from 0.5° to 2.5° in the entire inner area of the main surface of the piezoelectric film except the peripheral edge.SELECTED DRAWING: Figure 1
【課題】主面における周縁部を除く全域で、局所的な不良領域が出現しておらず、膜質が均一な大径の圧電膜を有する圧電積層体を得る。【解決手段】直径が3インチ以上の主面を有する基板と、基板上に製膜され、カリウム、ナトリウム、ニオブ、及び酸素を含み、ペロブスカイト構造のアルカリニオブ酸化物からなる圧電膜と、を備え、圧電膜に対してX線回折測定を行った際における、(001)面のX線ロッキングカーブの半値幅が、圧電膜の主面における周縁部を除く内側の全域において、0.5°以上2.5°以下の範囲内に収まっている。【選択図】図1
SPUTTERING TARGET MATERIAL AND METHOD FOR MANUFACTURING SPUTTERING TARGET MATERIAL
To obtain a piezoelectric laminate with a large diameter piezoelectric film with uniform film quality, with no localized defective areas appearing in the entire area on the main surface except for the peripheral edges.SOLUTION: A piezoelectric film is composed of a substrate having a main surface having a diameter of 3 inches or more and a perovskite structure of alkali niobium oxide containing potassium, sodium, niobium, and oxygen, and deposited on the substrate, and the width at half maximum of the X-ray rocking curve of the (001) plane in the X-ray diffraction measurement of the piezoelectric film is within the range from 0.5° to 2.5° in the entire inner area of the main surface of the piezoelectric film except the peripheral edge.SELECTED DRAWING: Figure 1
【課題】主面における周縁部を除く全域で、局所的な不良領域が出現しておらず、膜質が均一な大径の圧電膜を有する圧電積層体を得る。【解決手段】直径が3インチ以上の主面を有する基板と、基板上に製膜され、カリウム、ナトリウム、ニオブ、及び酸素を含み、ペロブスカイト構造のアルカリニオブ酸化物からなる圧電膜と、を備え、圧電膜に対してX線回折測定を行った際における、(001)面のX線ロッキングカーブの半値幅が、圧電膜の主面における周縁部を除く内側の全域において、0.5°以上2.5°以下の範囲内に収まっている。【選択図】図1
SPUTTERING TARGET MATERIAL AND METHOD FOR MANUFACTURING SPUTTERING TARGET MATERIAL
スパッタリングターゲット材、及びスパッタリングターゲット材の製造方法
KURODA TOSHIAKI (author) / SHIBATA KENJI (author) / WATANABE KAZUTOSHI (author) / KIMURA KENJI (author)
2022-11-01
Patent
Electronic Resource
Japanese
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