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SPUTTERING TARGET MATERIAL AND METHOD FOR MANUFACTURING SPUTTERING TARGET MATERIAL
To provide a KNN target material that has low density and is highly resistant against crack.SOLUTION: A sputtering target material comprises a sintered compact of an oxide including potassium, sodium, niobium and oxygen and has density of 4.2 g/cm3 or less and Vickers hardness of 30 or more and 200 or less, where an area average particle size of a plurality of crystal grains is 3.0 μm or more when being observed at a sputter surface.SELECTED DRAWING: Figure 1
【課題】低密度かつ割れに強いKNNターゲット材を提供する。【解決手段】カリウム、ナトリウム、ニオブ、及び酸素を含む酸化物の焼結体からなるスパッタリングターゲット材であって、密度が4.2g/cm3以下であり、ビッカース硬度が30以上200以下であり、スパッタ面にて観察される複数の結晶粒の面積平均粒子径が3.0μm以上である。【選択図】図1
SPUTTERING TARGET MATERIAL AND METHOD FOR MANUFACTURING SPUTTERING TARGET MATERIAL
To provide a KNN target material that has low density and is highly resistant against crack.SOLUTION: A sputtering target material comprises a sintered compact of an oxide including potassium, sodium, niobium and oxygen and has density of 4.2 g/cm3 or less and Vickers hardness of 30 or more and 200 or less, where an area average particle size of a plurality of crystal grains is 3.0 μm or more when being observed at a sputter surface.SELECTED DRAWING: Figure 1
【課題】低密度かつ割れに強いKNNターゲット材を提供する。【解決手段】カリウム、ナトリウム、ニオブ、及び酸素を含む酸化物の焼結体からなるスパッタリングターゲット材であって、密度が4.2g/cm3以下であり、ビッカース硬度が30以上200以下であり、スパッタ面にて観察される複数の結晶粒の面積平均粒子径が3.0μm以上である。【選択図】図1
SPUTTERING TARGET MATERIAL AND METHOD FOR MANUFACTURING SPUTTERING TARGET MATERIAL
スパッタリングターゲット材及びスパッタリングターゲット材の製造方法
KURODA TOSHIAKI (author) / SHIBATA KENJI (author) / WATANABE KAZUTOSHI (author) / IWATANI KOSAKU (author)
2024-03-13
Patent
Electronic Resource
Japanese
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