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SINTERED BODY AND COMPONENT FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT

IMAI MASAHITO / ITO YASUTAKA

To provide new applications for a sintered body of yttrium oxyfluoride (Y5O4F7).SOLUTION: A sintered body consists of yttrium oxyfluoride (Y5O4F7), and the powder X-ray diffraction chart of the sintered body shows no peaks based on yttrium fluoride (YF3) crystals and is used under a CF4 or O2 plasma atmosphere.SELECTED DRAWING: Figure 1

【課題】オキシフッ化イットリウム（Ｙ５О４Ｆ７）の焼結体の新たな用途を提供する。【解決手段】オキシフッ化イットリウム（Ｙ５О４Ｆ７）からなる焼結体であって、当該焼結体の粉末Ｘ線回折のチャートにおいて、フッ化イットリウム（ＹＦ３）結晶に基づくピークが確認されず、ＣＦ４プラズマもしくはＯ２プラズマ雰囲気下において使用されることを特徴とする焼結体。【選択図】図１

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SINTERED BODY AND COMPONENT FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT

IMAI MASAHITO / ITO YASUTAKA

To provide new applications for a sintered body of yttrium oxyfluoride (Y5O4F7).SOLUTION: A sintered body consists of yttrium oxyfluoride (Y5O4F7), and the powder X-ray diffraction chart of the sintered body shows no peaks based on yttrium fluoride (YF3) crystals and is used under a CF4 or O2 plasma atmosphere.SELECTED DRAWING: Figure 1

【課題】オキシフッ化イットリウム（Ｙ５О４Ｆ７）の焼結体の新たな用途を提供する。【解決手段】オキシフッ化イットリウム（Ｙ５О４Ｆ７）からなる焼結体であって、当該焼結体の粉末Ｘ線回折のチャートにおいて、フッ化イットリウム（ＹＦ３）結晶に基づくピークが確認されず、ＣＦ４プラズマもしくはＯ２プラズマ雰囲気下において使用されることを特徴とする焼結体。【選択図】図１

SINTERED BODY AND COMPONENT FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT

IMAI MASAHITO / ITO YASUTAKA

To provide new applications for a sintered body of yttrium oxyfluoride (Y5O4F7).SOLUTION: A sintered body consists of yttrium oxyfluoride (Y5O4F7), and the powder X-ray diffraction chart of the sintered body shows no peaks based on yttrium fluoride (YF3) crystals and is used under a CF4 or O2 plasma atmosphere.SELECTED DRAWING: Figure 1

【課題】オキシフッ化イットリウム（Ｙ５О４Ｆ７）の焼結体の新たな用途を提供する。【解決手段】オキシフッ化イットリウム（Ｙ５О４Ｆ７）からなる焼結体であって、当該焼結体の粉末Ｘ線回折のチャートにおいて、フッ化イットリウム（ＹＦ３）結晶に基づくピークが確認されず、ＣＦ４プラズマもしくはＯ２プラズマ雰囲気下において使用されることを特徴とする焼結体。【選択図】図１

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Title:

SINTERED BODY AND COMPONENT FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT

Additional title:

焼結体及び半導体製造装置用部材

Contributors:

IMAI MASAHITO (author) / ITO YASUTAKA (author)

Publication date:

2023-03-13

Type of media:

Patent

Type of material:

Electronic Resource

Language:

Japanese

Classification:

IPC: C04B Kalk , LIME / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES

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