A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
SINTERED BODY, AND COMPONENT FOR SEMICONDUCTOR-MANUFACTURING APPARATUS
To provide a sintered body of yttrium oxyfluoride excellent in impact resistance.SOLUTION: In the sintered body, particles made of yttrium fluoride are dispersed in a matrix of yttrium oxyfluoride. In a cross section of the sintered body, a relation between an average equivalent circle diameter D of the particles made of yttrium fluoride and an average distance L between centers of mass of the particles made of yttrium fluoride satisfies 1.50≤L/D≤20.0.SELECTED DRAWING: Figure 3A
【課題】耐衝撃性に優れたオキシフッ化イットリウムの焼結体を提供する。【解決手段】オキシフッ化イットリウムのマトリックス中にフッ化イットリウムからなる粒子が分散した焼結体であって、上記焼結体の断面における、上記フッ化イットリウムからなる粒子間の平均重心間距離Ｌと上記フッ化イットリウムからなる粒子の平均円相当径Ｄの関係が１．５０≦Ｌ／Ｄ≦２０．０を満たすことを特徴とする焼結体。【選択図】図３Ａ
SINTERED BODY, AND COMPONENT FOR SEMICONDUCTOR-MANUFACTURING APPARATUS
To provide a sintered body of yttrium oxyfluoride excellent in impact resistance.SOLUTION: In the sintered body, particles made of yttrium fluoride are dispersed in a matrix of yttrium oxyfluoride. In a cross section of the sintered body, a relation between an average equivalent circle diameter D of the particles made of yttrium fluoride and an average distance L between centers of mass of the particles made of yttrium fluoride satisfies 1.50≤L/D≤20.0.SELECTED DRAWING: Figure 3A
【課題】耐衝撃性に優れたオキシフッ化イットリウムの焼結体を提供する。【解決手段】オキシフッ化イットリウムのマトリックス中にフッ化イットリウムからなる粒子が分散した焼結体であって、上記焼結体の断面における、上記フッ化イットリウムからなる粒子間の平均重心間距離Ｌと上記フッ化イットリウムからなる粒子の平均円相当径Ｄの関係が１．５０≦Ｌ／Ｄ≦２０．０を満たすことを特徴とする焼結体。【選択図】図３Ａ
SINTERED BODY, AND COMPONENT FOR SEMICONDUCTOR-MANUFACTURING APPARATUS
焼結体及び半導体製造装置用部材
IMAI MASAHITO (author) / ITO YASUTAKA (author)
2023-02-09
Patent
Electronic Resource
Japanese
SINTERED BODY, AND COMPONENT FOR SEMICONDUCTOR-MANUFACTURING APPARATUS
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