A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
SINTERED COMPACT SPUTTERING TARGET AND METHOD FOR PRODUCING SINTERED COMPACT
Provide is a sintered body, a sputtering target, and a method for manufacturing a sintered body which have proper mechanical strength, effectively reduce bulk resistance, and are capable of suppressing generation of abnormal discharge. The sintered body of the present invention is a sintered body of an oxide containing In, Ga, and Zn and satisfying relationships of 0.317 < In / (In + Ga ＋ Zn) <= 0.350, 0.317 < Ga / (In + Ga + Zn) <= 0.350, and 0.317 < Zn / (In + Ga + Zn) <= 0.350. The bulk resistance value is more than or equal to 15 mΩcm and less than or equal to 25 mΩcm. The flexural strength is more than or equal to 49 MPa and less than 50 MPa.
(과제) 적절한 기계적 강도로 하면서, 벌크 저항을 유효하게 저감하고, 이상 방전의 발생을 억제할 수 있는 소결체, 스퍼터링 타깃 및 소결체의 제조 방법을 제공한다. (해결 수단) 본 발명의 소결체는, In, Ga 및 Zn 을 함유하는 산화물의 소결체로서, 0.317 ＜ In/(In ＋ Ga ＋ Zn) ≤ 0.350, 0.317 ＜ Ga/(In ＋ Ga ＋ Zn) ≤ 0.350, 및, 0.317 ＜ Zn/(In ＋ Ga ＋ Zn) ≤ 0.350 의 관계를 만족하고, 벌크 저항값이 15 mΩcm 이상이면서 또한 25 mΩcm 이하이고, 항절 강도가 40 ㎫ 이상이면서 또한 50 ㎫ 미만이다.
SINTERED COMPACT SPUTTERING TARGET AND METHOD FOR PRODUCING SINTERED COMPACT
Provide is a sintered body, a sputtering target, and a method for manufacturing a sintered body which have proper mechanical strength, effectively reduce bulk resistance, and are capable of suppressing generation of abnormal discharge. The sintered body of the present invention is a sintered body of an oxide containing In, Ga, and Zn and satisfying relationships of 0.317 < In / (In + Ga ＋ Zn) <= 0.350, 0.317 < Ga / (In + Ga + Zn) <= 0.350, and 0.317 < Zn / (In + Ga + Zn) <= 0.350. The bulk resistance value is more than or equal to 15 mΩcm and less than or equal to 25 mΩcm. The flexural strength is more than or equal to 49 MPa and less than 50 MPa.
(과제) 적절한 기계적 강도로 하면서, 벌크 저항을 유효하게 저감하고, 이상 방전의 발생을 억제할 수 있는 소결체, 스퍼터링 타깃 및 소결체의 제조 방법을 제공한다. (해결 수단) 본 발명의 소결체는, In, Ga 및 Zn 을 함유하는 산화물의 소결체로서, 0.317 ＜ In/(In ＋ Ga ＋ Zn) ≤ 0.350, 0.317 ＜ Ga/(In ＋ Ga ＋ Zn) ≤ 0.350, 및, 0.317 ＜ Zn/(In ＋ Ga ＋ Zn) ≤ 0.350 의 관계를 만족하고, 벌크 저항값이 15 mΩcm 이상이면서 또한 25 mΩcm 이하이고, 항절 강도가 40 ㎫ 이상이면서 또한 50 ㎫ 미만이다.
SINTERED COMPACT SPUTTERING TARGET AND METHOD FOR PRODUCING SINTERED COMPACT
소결체, 스퍼터링 타깃 및 소결체의 제조 방법
HIDESHIMA MASAAKI (author) / KAKUTA KOJI (author)
2020-03-31
Patent
Electronic Resource
Korean
SINTERED COMPACT SPUTTERING TARGET AND METHOD FOR PRODUCING SINTERED COMPACT
European Patent Office | 2021
| European Patent Office | 2019
| European Patent Office | 2015
OXIDE SINTERED COMPACT, SPUTTERING TARGET, THIN FILM AND METHOD OF PRODUCING OXIDE SINTERED COMPACT
| European Patent Office | 2016
| European Patent Office | 2017