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NbO2 Sintered Compact, Sputtering Target Comprising the Sintered Compact, and Method of Producing NbO2 Sintered Compact
The present invention relates to a NbO2 sintered compact characterized in that the intensity proportion of the X-ray diffraction peak intensity of a (001) plane or (110) plane of Nb2O5 relative to the X-ray diffraction peak intensity of a (400) plane of NbO2 is 1% or less. The present invention provides, without using an expensive NbO2 material, a NbO2 sintered compact that can be applied to a sputtering target for forming a high-quality variable resistance layer for a ReRAM. In particular, it is an object of the present invention to provide a single phase NbO2 sintered compact having a high density suitable for stabilizing sputtering.
NbO2 Sintered Compact, Sputtering Target Comprising the Sintered Compact, and Method of Producing NbO2 Sintered Compact
The present invention relates to a NbO2 sintered compact characterized in that the intensity proportion of the X-ray diffraction peak intensity of a (001) plane or (110) plane of Nb2O5 relative to the X-ray diffraction peak intensity of a (400) plane of NbO2 is 1% or less. The present invention provides, without using an expensive NbO2 material, a NbO2 sintered compact that can be applied to a sputtering target for forming a high-quality variable resistance layer for a ReRAM. In particular, it is an object of the present invention to provide a single phase NbO2 sintered compact having a high density suitable for stabilizing sputtering.
NbO2 Sintered Compact, Sputtering Target Comprising the Sintered Compact, and Method of Producing NbO2 Sintered Compact
NARITA SATOYASU (author)
2015-09-10
Patent
Electronic Resource
English
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