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Method for manufacturing graphite coated silicon carbide particles
A method for manufacturing graphite coated silicon carbide particles according to the present invention comprises a step of forming a graphite layer on the surface of silicon carbide particles by thermal chemical vapor deposition, and a step of controlling the thickness and crystallinity of the graphite layer by the synthesis temperature or synthesis time during thermal chemical vapor deposition. The graphite coated silicon carbide particles manufactured thereby can be suitably processed for semiconductors, aerospace, petrochemicals, nuclear energy, photocatalysts, and laser absorbers without processing at relatively low temperatures using high-temperature and high-pressure processing conditions and sintering additives, unlike the prior art. In addition, contact resistance between the silicon carbide particles increases, so that side effects of various characteristics of silicon carbide deteriorating can be prevented.
본 발명에 따른 흑연코팅 탄화규소입자 제조방법은, 탄화규소 입자들의 표면에 열화학기상증착법으로 흑연층을 형성하며, 흑연층의 두께와 결정성을 열화학기상증착시의 합성 온도 또는 합성 시간으로 조절한다. 이렇게 제조된 흑연코팅 탄화규소입자는, 종래와 달리 고온 및 고압의 가공 조건과, 소결 첨가제를 이용하여 비교적 낮은 온도에서 가공하지 않아도, 반도체, 항공우주, 석유화학, 원자력 에너지, 광촉매, 레이저 흡수제에 적합하게 가공될 수 있다. 또한, 탄화규소 입자 사이 접촉 저항이 커져, 탄화규소가 가지는 다양한 특성이 떨어지는 부작용을 막을 수 있다.
Method for manufacturing graphite coated silicon carbide particles
A method for manufacturing graphite coated silicon carbide particles according to the present invention comprises a step of forming a graphite layer on the surface of silicon carbide particles by thermal chemical vapor deposition, and a step of controlling the thickness and crystallinity of the graphite layer by the synthesis temperature or synthesis time during thermal chemical vapor deposition. The graphite coated silicon carbide particles manufactured thereby can be suitably processed for semiconductors, aerospace, petrochemicals, nuclear energy, photocatalysts, and laser absorbers without processing at relatively low temperatures using high-temperature and high-pressure processing conditions and sintering additives, unlike the prior art. In addition, contact resistance between the silicon carbide particles increases, so that side effects of various characteristics of silicon carbide deteriorating can be prevented.
본 발명에 따른 흑연코팅 탄화규소입자 제조방법은, 탄화규소 입자들의 표면에 열화학기상증착법으로 흑연층을 형성하며, 흑연층의 두께와 결정성을 열화학기상증착시의 합성 온도 또는 합성 시간으로 조절한다. 이렇게 제조된 흑연코팅 탄화규소입자는, 종래와 달리 고온 및 고압의 가공 조건과, 소결 첨가제를 이용하여 비교적 낮은 온도에서 가공하지 않아도, 반도체, 항공우주, 석유화학, 원자력 에너지, 광촉매, 레이저 흡수제에 적합하게 가공될 수 있다. 또한, 탄화규소 입자 사이 접촉 저항이 커져, 탄화규소가 가지는 다양한 특성이 떨어지는 부작용을 막을 수 있다.
Method for manufacturing graphite coated silicon carbide particles
흑연코팅 탄화규소입자 제조방법
KIM CHANG DUK (author)
2022-07-01
Patent
Electronic Resource
Korean
IPC:
C04B
Kalk
,
LIME
Method for manufacturing graphite coated silicon carbide particles
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