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Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD
There is great interest in SiGe/Si heterojunction tunnel diodes for novel devices such as sharp subthreshold slope MOSFET's. High tunneling current densities are a clear goal (for MOSFET drive current, e.g.). This work presents two clear results: (i) a direct measurement of the dependences on bandgap (Ge fraction) of the direct tunneling current vs. the “excess” defect-assisted tunneling current, and (ii) the highest direct tunneling currents (NDR current peaks) observed in Si-based heterojunction diodes grown by chemical vapor deposition.
Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD
There is great interest in SiGe/Si heterojunction tunnel diodes for novel devices such as sharp subthreshold slope MOSFET's. High tunneling current densities are a clear goal (for MOSFET drive current, e.g.). This work presents two clear results: (i) a direct measurement of the dependences on bandgap (Ge fraction) of the direct tunneling current vs. the “excess” defect-assisted tunneling current, and (ii) the highest direct tunneling currents (NDR current peaks) observed in Si-based heterojunction diodes grown by chemical vapor deposition.
Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD
Li, Jiun-Yun (Autor:in) / Sturm, James C. (Autor:in) / Majumdar, A. (Autor:in) / Lauer, I. (Autor:in) / Koester, S. (Autor:in)
2009 Device Research Conference ; 99-100
01.06.2009
410773 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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