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3C-SiC films on Si for MEMS applications: Mechanical properties
Single crystal 3C-SiC films were grown on (100) and (111) Si substrate orientations in order to study the resulting mechanical properties of this material. In addition, polycrystalline 3C-SiC was also grown on (100)Si so that a comparison with monocrystaline 3C-SiC, also grown on (100)Si, could be made. The mechanical properties of single crystal and polycrystalline 3C-SiC films grown on Si substrates were measured by means of nanoindentation using a Berkovich diamond tip. These results indicate that polycrystalline SiC thin films are attractive for MEMS applications when compared with the single crystal 3C-SiC, which is promising since growing single crystal 3C-SiC films is more challenging. MEMS cantilevers and membranes fabricated from a 2 micron thick single crystal 3C-SiC grown on (100)Si under similar conditions resulted in a small degree of bow with only 9 micron of deflection for a cantilever of 700 micron length with an estimated tensile film stress of 300 MPa. Single crystal 3C-SiC films on (111) Si substrates have the highest elastic and plastic properties, although due to high residual stress they tend to crack and delaminate.
3C-SiC films on Si for MEMS applications: Mechanical properties
Single crystal 3C-SiC films were grown on (100) and (111) Si substrate orientations in order to study the resulting mechanical properties of this material. In addition, polycrystalline 3C-SiC was also grown on (100)Si so that a comparison with monocrystaline 3C-SiC, also grown on (100)Si, could be made. The mechanical properties of single crystal and polycrystalline 3C-SiC films grown on Si substrates were measured by means of nanoindentation using a Berkovich diamond tip. These results indicate that polycrystalline SiC thin films are attractive for MEMS applications when compared with the single crystal 3C-SiC, which is promising since growing single crystal 3C-SiC films is more challenging. MEMS cantilevers and membranes fabricated from a 2 micron thick single crystal 3C-SiC grown on (100)Si under similar conditions resulted in a small degree of bow with only 9 micron of deflection for a cantilever of 700 micron length with an estimated tensile film stress of 300 MPa. Single crystal 3C-SiC films on (111) Si substrates have the highest elastic and plastic properties, although due to high residual stress they tend to crack and delaminate.
3C-SiC films on Si for MEMS applications: Mechanical properties
Locke, C. (author) / Kravchenko, G. (author) / Waters, P. (author) / Reddy, J.D. (author) / Du, K. (author) / Volinsky, A.A. (author) / Frewin, C.L. (author) / Saddow, S.E. (author)
2009
4 Seiten, 2 Tabellen, 12 Quellen
Conference paper
English
chemische Dampfphasenbeschichtung , Einkristall , FTIR-Spektroskopie , Halbleiterfertigung , kubische Struktur , mechanische Spannungsverteilung , MEMS (mikroelektromechanisches System) , Nanoeindringprüfung , Nanohärteeindruck , Polykristall , Polymorphie , Resonator , Röntgenbeugung , Siliciumcarbid , Siliciumsubstrat , Silicium-Wafer , Träger (Bauwesen) , Zugspannung
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