Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Deposition temperature dependence of electrical instability in an InP metal-insulator-semiconductor capacitor provided by plasma-enhanced chemical vapour deposited silicon nitride
Deposition temperature dependence of electrical instability in an InP metal-insulator-semiconductor capacitor provided by plasma-enhanced chemical vapour deposited silicon nitride
Deposition temperature dependence of electrical instability in an InP metal-insulator-semiconductor capacitor provided by plasma-enhanced chemical vapour deposited silicon nitride
Lee, M. B. (Autor:in) / Han, I. K. (Autor:in) / Lee, Y. J. (Autor:in) / Lee, J. I. (Autor:in)
JOURNAL OF MATERIALS SCIENCE LETTERS ; 12 ; 90
01.01.1993
90 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Stress in low-temperature plasma enhanced chemical vapour deposited silicon nitride thin films
| British Library Online Contents | 2006
| British Library Online Contents | 1994
Structural study of plasma enhanced chemical vapour deposited silicon carbide films
| British Library Online Contents | 2000
Chemical vapour deposition of silicon nitride in a microwave plasma assisted reactor
| British Library Online Contents | 1996
| British Library Online Contents | 1992