Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Deposition temperature dependence of electrical instability in an InP metal-insulator-semiconductor capacitor provided by plasma-enhanced chemical vapour deposited silicon nitride

    New search for: Lee, M. B.
    New search for: Han, I. K.
    New search for: Lee, Y. J.
    New search for: Lee, J. I.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Deposition temperature dependence of electrical instability in an InP metal-insulator-semiconductor capacitor provided by plasma-enhanced chemical vapour deposited silicon nitride

    New search for: Lee, M. B.
    New search for: Han, I. K.
    New search for: Lee, Y. J.
    New search for: Lee, J. I.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Deposition temperature dependence of electrical instability in an InP metal-insulator-semiconductor capacitor provided by plasma-enhanced chemical vapour deposited silicon nitride

    New search for: Lee, M. B.
    New search for: Han, I. K.
    New search for: Lee, Y. J.
    New search for: Lee, J. I.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Deposition temperature dependence of electrical instability in an InP metal-insulator-semiconductor capacitor provided by plasma-enhanced chemical vapour deposited silicon nitride

    Contributors:

    Lee, M. B. (author) / Han, I. K. (author) / Lee, Y. J. (author) / Lee, J. I. (author)

    Published in:

    JOURNAL OF MATERIALS SCIENCE LETTERS ; 12 ; 90

    Publication date:

    1993-01-01

    Size:

    90 pages

    ISSN:

    0261-8028

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Stress in low-temperature plasma enhanced chemical vapour deposited silicon nitride thin films

    Martyniuk, M. / Antoszewski, J. / Musca, C. A. et al. | British Library Online Contents | 2006

    Two-temperature technique for plasma-enhanced chemical vapour deposition growth of silicon-nitride on InP

    Her, J. / Lim, H. / Kim, C. H. et al. | British Library Online Contents | 1994

    Structural study of plasma enhanced chemical vapour deposited silicon carbide films

    Choi, W. K. / Gangadharan, S. | British Library Online Contents | 2000

    Chemical vapour deposition of silicon nitride in a microwave plasma assisted reactor

    Monteiro, O. R. / Wang, Z. / Brown, I. G. | British Library Online Contents | 1996

    Microstructures of diamond films deposited on (100) silicon wafer by microwave plasma-enhanced chemical vapour deposition

    Jung Ho Je / Lee, G. Y. | British Library Online Contents | 1992

    Back to top