Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Cu precipitation in oxidized wafers with and without a Ge~xSi~1~-~x heteroepitaxial layer
Cu precipitation in oxidized wafers with and without a Ge~xSi~1~-~x heteroepitaxial layer
Cu precipitation in oxidized wafers with and without a Ge~xSi~1~-~x heteroepitaxial layer
Kissinger, G. (Autor:in) / Morgenstern, G. (Autor:in) / Richter, H. (Autor:in)
JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 8 ; 1900
01.01.1993
1900 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Physisorption of krypton on thermally oxidized silicon wafers
| British Library Online Contents | 1993
Deformation mechanisms of Al films on oxidized Si wafers
| British Library Online Contents | 1994
Characterization of PdAu thin films on oxidized silicon wafers: interdiffusion and reaction
| British Library Online Contents | 2003
Electrical characteristics of oxygen precipitation related defects in Czochralski silicon wafers
| British Library Online Contents | 1996
Gettering in silicon-on-insulator wafers with polysilicon layer
| British Library Online Contents | 2009