Cu precipitation in oxidized wafers with and without a Ge~xSi~1~-~x heteroepitaxial layer: Fid-Bau Portal

Cu precipitation in oxidized wafers with and without a Ge~xSi~1~-~x heteroepitaxial layer

Kissinger, G. / Morgenstern, G. / Richter, H.

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Cu precipitation in oxidized wafers with and without a Ge~xSi~1~-~x heteroepitaxial layer

Kissinger, G. / Morgenstern, G. / Richter, H.

Cu precipitation in oxidized wafers with and without a Ge~xSi~1~-~x heteroepitaxial layer

Kissinger, G. / Morgenstern, G. / Richter, H.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Cu precipitation in oxidized wafers with and without a Ge~xSi~1~-~x heteroepitaxial layer

Contributors:

Kissinger, G. (author) / Morgenstern, G. (author) / Richter, H. (author)

Published in:

JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 8 ; 1900

Publication date:

1993-01-01

Size:

1900 pages

ISSN:

0884-2914

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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