Epitaxial nucleation of polycrystalline silicon carbide during chemical vapor deposition

Sheldon, B. W. / Besmann, T. M. / More, K. L. et al. | British Library Online Contents | 1993

Characterization of polycrystalline silicon carbide films grown by atmospheric pressure chemical vapor deposition on polycrystalline silicon

Zorman, C. A. / Roy, S. / Wu, C.-H. et al. | British Library Online Contents | 1998

P-doped polycrystalline silicon films obtained at low temperature by hot-wire chemical vapor deposition

Puigdollers, J. / Cifre, J. / Polo, M. C. et al. | British Library Online Contents | 1995

Polycrystalline silicon film formation at low temperature using ultra-high-frequency plasma enhanced chemical vapor deposition

Mebarki, B. / Sumiya, S. / Yoshida, R. et al. | British Library Online Contents | 1999

Characterization of reduced-pressure chemical vapor deposition polycrystalline silicon germanium deposited at temperatures

Sedky, S. / Witvrouw, A. / Caymax, M. et al. | British Library Online Contents | 2002