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Characterisation of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering
Characterisation of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering
Characterisation of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering
Anwand, W. (Autor:in) / Brauer, G. (Autor:in) / Coleman, P.G. (Autor:in) / Voelskow, M. (Autor:in) / Skorupa, W. (Autor:in)
APPLIED SURFACE SCIENCE ; 149 ; 148-150
01.01.1999
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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