Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Characterisation of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering

    New search for: Anwand, W.
    New search for: Brauer, G.
    New search for: Coleman, P.G.
    New search for: Voelskow, M.
    New search for: Skorupa, W.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Characterisation of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering

    New search for: Anwand, W.
    New search for: Brauer, G.
    New search for: Coleman, P.G.
    New search for: Voelskow, M.
    New search for: Skorupa, W.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Characterisation of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering

    New search for: Anwand, W.
    New search for: Brauer, G.
    New search for: Coleman, P.G.
    New search for: Voelskow, M.
    New search for: Skorupa, W.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Characterisation of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering

    Contributors:

    Anwand, W. (author) / Brauer, G. (author) / Coleman, P.G. (author) / Voelskow, M. (author) / Skorupa, W. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 149 ; 148-150

    Publication date:

    1999-01-01

    Size:

    3 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Structural Characterisation of Er Implanted, Ge-Rich SiO~2 Layers Using Slow Positron Implantation Spectroscopy

    Anwand, W. / Kanjilal, A. / Brauer, G. et al. | British Library Online Contents | 2011

    Characterization of vacancy-type defects in Al^+ and N^+ co-implanted SiC by slow positron implantation spectroscopy

    Anwand, W. / Brauer, G. / Coleman, P.G. et al. | British Library Online Contents | 1999

    Rutherford backscattering/channeling study of the implanted MeV Au^+ in silicon

    Wang, K.-M. / Meng, M.-Q. / Lu, F. et al. | British Library Online Contents | 1999

    Rutherford backscattering studies of solid phase recrystallization and incorporation in erbium-implanted silicon

    Li, D.-Q. / Ren, T.-Q. / Gong, B.-A. et al. | British Library Online Contents | 1995

    Slow Positron Implantation Spectroscopy of Insulators: Charging Effects

    Coleman, P. G. / Kuna, S. / Grynszpan, R. | British Library Online Contents | 1997

    Back to top