Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor
3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor
3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor
Ji, W. (Autor:in) / Lofgren, P. M. (Autor:in) / Hallin, C. (Autor:in) / Gu, C.-Y. (Autor:in)
MATERIALS SCIENCE FORUM ; 338/342 ; 149-152
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor
British Library Online Contents | 2012
|Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor
British Library Online Contents | 2005
|10 x 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor
British Library Online Contents | 2013
|Computational Modeling for the Development of CVD SiC Epitaxial Growth Processes
British Library Online Contents | 2003
|Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor
British Library Online Contents | 2002
|