3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor: Fid-Bau Portal

3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor

Ji, W. / Lofgren, P. M. / Hallin, C. / Gu, C.-Y.

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3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor

Ji, W. / Lofgren, P. M. / Hallin, C. / Gu, C.-Y.

3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor

Ji, W. / Lofgren, P. M. / Hallin, C. / Gu, C.-Y.

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Check availability in my library

Order at Subito €

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Document information

Title:

3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor

Contributors:

Ji, W. (author) / Lofgren, P. M. (author) / Hallin, C. (author) / Gu, C.-Y. (author)

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 149-152

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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