Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Analysis on interface states of ultrathin-SiO2/Si(111)

    New search for: Hasunuma, R.
    New search for: Ando, A.
    New search for: Miki, K.
    New search for: Nishioka, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Analysis on interface states of ultrathin-SiO2/Si(111)

    New search for: Hasunuma, R.
    New search for: Ando, A.
    New search for: Miki, K.
    New search for: Nishioka, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Analysis on interface states of ultrathin-SiO2/Si(111)

    New search for: Hasunuma, R.
    New search for: Ando, A.
    New search for: Miki, K.
    New search for: Nishioka, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Analysis on interface states of ultrathin-SiO2/Si(111)

    Contributors:

    Hasunuma, R. (author) / Ando, A. (author) / Miki, K. (author) / Nishioka, Y. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 159-160 ; 83-88

    Publication date:

    2000-01-01

    Size:

    6 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Influence of nitrogen incorporation in ultrathin SiO2 on the structure and electronic states of the SiO2/Si(100) interface

    Miyazaki, S. / Tamura, T. / Ogasawara, M. et al. | British Library Online Contents | 2000

    Detection of interface states correlated with SiO2/Si(111) interface structures

    Watanabe, N. / Teramoto, Y. / Omura, A. et al. | British Library Online Contents | 2000

    Ultrathin SiO2 layer formed by the nitric acid oxidation of Si (NAOS) method to improve the thermal-SiO2/Si interface for crystalline Si solar cells

    Matsumoto, Taketoshi / Nakajima, Hiroki / Irishika, Daichi et al. | British Library Online Contents | 2017

    Ultrathin SiO2 layer formed by the nitric acid oxidation of Si (NAOS) method to improve the thermal-SiO2/Si interface for crystalline Si solar cells

    Matsumoto, Taketoshi / Nakajima, Hiroki / Irishika, Daichi et al. | British Library Online Contents | 2017

    XPS analysis of carrier trapping phenomena in ultrathin SiO2 film formed on Si substrate

    Hirose, K. / Kawashiri, S. / Hattori, T. | British Library Online Contents | 2004

    Back to top